2SK2376_06 TOSHIBA [Toshiba Semiconductor], 2SK2376_06 Datasheet

2SK2376_06

Manufacturer Part Number

2SK2376_06

Description

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK2376_06.pdf (6 pages)

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Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

Low leakage current : I

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

Characteristics

= 25 V, T

Pulse (Note 1)

DC (Note 1)

= 20 kΩ)

: V

DSS

= 25°C (initial), L = 471 μH, R

(Note 2)

= 0.8~2.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK2376

Symbol

th (ch−a)

th (ch−c)

| = 40 S (typ.)

= 10 V, I

= 13 mΩ (typ.)

−55~150

= 60 V)

Rating

±20

180

100

701

150

1.25

83.3

Max

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 45 A

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

−π−MOSV)

2-10S1B

2-10S2B

2006-11-17

―

2SK2376

Unit: mm

Related parts for 2SK2376_06

2SK2376_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

Page 3

3 2SK2376 2006-11-17 ...

Page 4

4 2SK2376 2006-11-17 ...

Page 5

Ω 471 μ 2SK2376 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − V VDSS DD ⎝ ⎠ ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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