2SK2382_06 TOSHIBA [Toshiba Semiconductor], 2SK2382_06 Datasheet - Page 2

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2SK2382_06

Manufacturer Part Number
2SK2382_06
Description
Silicon N Channel MOS Type Switching Regulator, DC−DC Converter and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(Gate−source plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Characteristics
Characteristics
K2382
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
Q
t
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
V
I
V
V
V
V
V
I
I
dI
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
DR
= 10 mA, V
= 15 A, V
= 15 A, V
= 200 V, V
= 10 V, I
= 10 V, I
= 10 V, V
≈ 100 V, V
= ±16 V, V
= 10 V, I
/ dt = 100 A / μs
2
D
D
D
GS
GS
GS
(Ta = 25°C)
GS
Test Condition
Test Condition
= 1 mA
= 10 A
DS
GS
= 10 A
GS
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
= 0 V
D
= 15 A
200
Min
Min
1.5
10
2000
Typ.
0.13
Typ.
1.13
200
600
180
17
35
50
10
66
40
25
15
2006-11-21
2SK2382
0.18
−2.0
Max
Max
±10
100
3.5
15
45
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
S
A
A
V

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