SI7461DP_05 VISHAY [Vishay Siliconix], SI7461DP_05 Datasheet

SI7461DP_05

Manufacturer Part Number

SI7461DP_05

Description

P-Channel 60-V (D-S) MOSFET

Manufacturer

VISHAY [Vishay Siliconix]

Datasheet

1.SI7461DP_05.pdf (4 pages)

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CHARACTERISTICS

DESCRIPTION

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 72624

S-52519Rev. B, 12-Dec-05

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

The attached spice model describes the typical electrical

characteristics of the p-channel vertical DMOS.

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0-V to 10-V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

P-Channel 60-V (D-S) MOSFET

The subcircuit

SPICE Device Model Si7461DP

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

Characteristics

model. All model parameter values are optimized

Vishay Siliconix

www.vishay.com

Related parts for SI7461DP_05

SI7461DP_05 Summary of contents

Page 1

P-Channel 60-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. model is extracted and optimized over the ...

Page 2

SPICE Device Model Si7461DP Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source ...

Page 3

COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 72624 S-52519Rev. B, 12-Dec-05 SPICE Device Model Si7461DP Vishay Siliconix =25°C UNLESS OTHERWISE NOTED) J www.vishay.com 3 ...

Page 4

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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