2SK2503_1 ROHM [Rohm], 2SK2503_1 Datasheet - Page 2

• Manufacturer Part Number: 2SK2503_1
• Description: 4V Drive Nch MOS FET
• Manufacturer: ROHM [Rohm]

Transistors
∗
Static drain-source on-state
resistance
Electrical characteristics (Ta=25°C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Pw
≤
300
µ
s, Duty cycle
Parameter
≤
1%
V
Symbol
R
V
(BR)DSS
t
t
I
I
C
C
C
DS(on)
GS(th)
Y
d(on)
d(off)
GSS
DSS
t
t
oss
rss
iss
fs
r
f
∗
Min.
1.0
4.0
60
−
−
−
−
−
−
−
−
−
−
−
Typ.
0.11
0.17
520
240
100
5.0
20
50
20
−
−
−
−
−
0.135
± 100
Max.
0.20
2.5
10
−
−
−
−
−
−
−
−
−
Unit
nA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
I
I
V
V
f=1MHz
I
V
R
R
D
D
D
D
D
GS
DS
DS
DS
GS
GS
L
G
=1mA, V
=2.5A, V
=2.5A, V
=2.5A, V
=2.5A, V
=12Ω
=10Ω
= ± 20V, V
=60V, V
=10V, I
=10V
=0V
=10V
Test Conditions
GS
GS
DS
DD
D
GS
=1mA
GS
=10V
=4V
=10V
=30V
=0V
DS
=0V
=0V
Rev.A
2SK2503
2/5