2SK2503_1 ROHM [Rohm], 2SK2503_1 Datasheet - Page 3

• Manufacturer Part Number: 2SK2503_1
• Description: 4V Drive Nch MOS FET
• Manufacturer: ROHM [Rohm]

Transistors
Fig.7 Static Drain-Source On-State Resistance
Electrical characteristics curve
0.5
0.1
4.0
3.0
2.0
1.0
50
10
−50
5
1
0
0.5
0.3
0.2
0.1
Fig.1 Maximum Safe Operating Area
vs. Gate-Source Voltage
0
Tc = 25°C
Single pulse
0
Fig.4 Gate Threshold Voltage
CHANNEL TEMPERATURE : T ch
−25
DRAIN-SOURCE VOLTAGE : V
1
GATE-SOURCE VOLTAGE : V
vs. Channel Temperature
0
2
5
25
5
25
10
10
75
20
100 125 150
2.5A
I
D
V
I
15
D
=5A
DS
= 1mA
Ta=25°C
DS
Pulsed
GS
= 10V
50
(°C)
(V)
(V)
100
20
Fig.8 Static Drain-Source On-State Resistance
Fig.5 Static Drain-Source On-State
Fig.5
0.05
0.02
0.01
0.5
0.2
0.1
10
10
0.01
5
2
1
0.6
0.5
0.4
0.3
0.2
0.1
9
8
7
6
5
4
3
2
1
0
−50
Fig.2 Typical Output Characteristics
0
0
V
Pulsed
vs. Channel Temperature
Resistance vs. Drain Current ( Ι )
GS
0.02
= 10V
DRAIN-SOURCE VOLTAGE : V
CHANNEL TEMPERATURE : Tch
−25
0.05 0.1
Ta=125°C
DRAIN CURRENT : I
1
0
−25°C
75°C
25°C
I
D
=5A
25
0.2
2
10V
8V
6V
5V
50
0.5
2.5A
3
75
1
D
(A)
V
100 125 150
2
GS
Pulsed
Ta = 25°C
4
V
=3V
Pulsed
4V
DS
GS
5
(V)
= 10V
(°C)
10
5
Fig.6 Static Drain-Source On-State
Fig.6
0.05
0.02
0.01
0.5
0.2
0.1
0.05
0.02
0.01
100
Fig.3 Typical Transfer Characteristics
10
0.5
0.2
0.1
0.5
0.2
0.1
50
20
10
5
2
1
0.01 0.02 0.05
10
5
2
1
0.01 0.02 0.05
5
2
1
Fig.9 Forward Transfer Admittance
0
V
Pulsed
V
Pulsed
Resistance vs. Drain Current ( ΙΙ )
V
Pulsed
GS
DS
DS
Ta=125°C
= 10V
GATE-SOURCE VOLTAGE : V
= 4V
= 10V
1
vs. Drain Current
−25°C
DRAIN CURRENT : I
75°C
25°C
DRAIN CURRENT : I
Ta=125°C
Ta= −25°C
2
0.1 0.2
−25°C
0.1 0.2
125°C
75°C
25°C
25°C
75°C
Rev.A
3
4
0.5
0.5
2SK2503
1.0 2.0
5
1
D
D
(A)
2.0
(A)
6
GS
5.0 10.0
5.0 10
(V)
7
3/5
8