SSM3J13T_07 TOSHIBA [Toshiba Semiconductor], SSM3J13T_07 Datasheet

SSM3J13T_07

Manufacturer Part Number

SSM3J13T_07

Description

Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.SSM3J13T_07.pdf (6 pages)

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Power Management Switch

High Speed Switching Applications

•

Absolute Maximum Ratings

Marking

Handling Precaution

Small Package

Low on Resistance : R

Low Gate Threshold Voltage

Drain-Source voltage

Gate-Source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note:

Note 1: Mounted on FR4 board

Note 2: The pulse width limited by max channel temperature.

environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and

containers and other objects that come into direct contact with devices should be made of anti-static materials.

the board material, board area, board thickness and pad area, and are also affected by the environment in

which the product is used. When using this device, please take heat dissipation fully into account

When handling individual devices (which are not yet mounted on a circuit board), be sure that the

The Channel-to-Ambient thermal resistance R

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm

KDH

Characteristics

: R

Pulse

= 70 mΩ (max) (@V

= 95 mΩ (max) (@V

Silicon P Channel MOS Type (U-MOSII)

(Ta = 25°C)

TOSHIBA Field Effect Transistor

Symbol

SSM3J13T

GSS

(Note 2)

(Note 1)

stg

Equivalent Circuit

= −4 V)

= −2.5 V)

th (ch-a)

−55~150

Rating

−3.0

−6.0

1.25

−12

150

±8

, t = 10 s)

and the drain power dissipation P

Unit

°C

Weight: 10 mg (typ.)

JEDEC

JEITA

TOSHIBA

vary according to

SSM3J13T

2-3S1A

2007-11-01

―

Unit: mm

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SSM3J13T_07 Summary of contents

Page 1

Power Management Switch High Speed Switching Applications • Small Package • Low on Resistance : mΩ (max) (@ mΩ (max) (@V on • Low Gate Threshold Voltage Absolute Maximum Ratings Characteristics Drain-Source ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Note 3: Pulse test Switching Time ...

Page 3

I – −4 −4 V Common Source −2 25°C −2.0 V −1.6 V −1.8 V −3 −2 − −1 −0.5 −1 −1.5 0 Drain-Source voltage V DS (V) R ...

Page 4

V – −1 Common Source − −0.1 mA −0.8 −0.6 −0.4 −0.2 0 − 100 Ambient temperature Ta (°C) t – 1000 Common Source V ...

Page 5

Safe operating area − max (pulsed max (continuous −1 DC operation −0.1 Mounted on FR4 board (25.4 mm × 25.4 mm × 1 Pad: 645 Single ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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