UPG2314T5N-E2 CEL [California Eastern Labs], UPG2314T5N-E2 Datasheet
UPG2314T5N-E2
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UPG2314T5N-E2 Summary of contents
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... POWER AMPLIFIER FOR Bluetooth DESCRIPTION The uPG2314T5N is a GaAs HBT MMIC power amplifier which was developed for Bluetooth This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in a 6-pin TSON Thin Small Out-line Non-Leaded package. And this package is able to high-density surface mounting ...
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... PWB, T Unless otherwise specified, T Symbol MIN. TYP. MAX. f 2400 2450 2500 opt V V 2.7 3.0 CC1, CC2 + V 0 3.0 bias enable V 0 3.0 cont Preliminary Data Sheet uPG2314T5N Pin No Pin Name 1 OUTPUT / bias INPUT GND Unit dBm ...
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... Efficiency PAE V cont = + 2450MHz CC1 Conditions = 3.0V 0dBm in = 3.0V 0dBm bias enable = 3.0V 0dBm 0dBm 3.0V 0dBm in = 3.0V 0dBm in Preliminary Data Sheet uPG2314T5N = 3.0V, CC2 bias enable MIN. TYP. MAX +18.0 +20.0 - dBm - -3.0 +1.0 dBm ...
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... OUTPUT bias enable V cont The application circuits and their parameters are for reference only and are not intended for use in actual design-ins CC2 2.7nH 1 Bias Circuit 2 Bias Circuit 3 Preliminary Data Sheet uPG2314T5N 1nF 2.7nH INPUT 4 4.7nH CC1 ...
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... PACKAGE DIMENSIONS 6-PIN PLASTIC TSON UNIT: mm Preliminary Data Sheet uPG2314T5N 5 ...
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... Preliminary Data Sheet uPG2314T5N ...
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Subject: Compliance with EU Dire ctives CEL certifies, to its kno w ledge, that semicondu ctor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical ...