M58LW064 ST Microelectronics, M58LW064 Datasheet - Page 42
M58LW064
Manufacturer Part Number
M58LW064
Description
64 Mbit x16 and x16/x32 / Block Erase Low Voltage Flash Memories
Manufacturer
ST Microelectronics
Datasheet
1.M58LW064.pdf
(53 pages)
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M58LW064A, M58LW064B
Figure 21. Program Suspend & Resume Flowchart and Pseudo Code
42/53
Program Continues
Read data from
another block
Read Status
Command
Command
Command
Command
Write B0h
Write FFh
Write D0h
Write 70h
Register
b7 = 1
b4 = 1
Start
YES
YES
NO
NO
Program Complete
Read Data
Command
Write FFh
PES instruction:
– write B0h command
(memory enters read register
state after the PES instruction)
do:
– read status register
while b7 = 1
If b4 = 0, Program completed
(at this point the memory will
accept only the RD or PER instruction)
RD instruction:
– write FFh command
– one or more data reads
PER instruction:
– write D0h command
– if the program operation completed
(E or G must be toggled)
from another block
to resume erasure
then this is not necessary. The device
returns to Read Array as normal
(as if the Program/Erase suspend
was not issued).
AI00612