PA2423G-EV SiGe Semiconductor Inc., PA2423G-EV Datasheet

no-image

PA2423G-EV

Manufacturer Part Number
PA2423G-EV
Description
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Manufacturer
SiGe Semiconductor Inc.
Datasheet
DOC # 05PDS003 Rev 5
Applications
Features
Ordering Information
PA2423G
PA2423G-EV
Functional Block Diagram
Bluetooth
USB Dongles
Laptops
Access Points
Cordless Piconets
Flip chip and chip-on-board applications
+22.5 dBm at 47% Power Added Efficiency
Low current 80 mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
-40C to +85C temperature range
Gold bump bare die (0.63mm x 0.96mm)
Part
tm
Class 1
Gold bump bare
die
IN
Evaluation kit
Package
Stage 1
GND
Diced wafer
Waffle pack
Shipping
Method
Bias Generator
07/26/2001
Interstage
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Match
V
V
CTL
CC1
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423G is designed for
Class 1 Bluetooth
delivers +22.5 dBm output power with 47% power-
added
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
Class 1 Bluetooth
The amplifier features:
An on-chip ramping circuit corrects the turn-on/off
switching of amplifier output with less than 3 dB
overshoot, meeting the Bluetooth
The PA2423G operates at 3.3V DC.
output power level (+22.5 dBm), its current
consumption is 120 mA.
The silicon/silicon-germanium structure of the
PA2423G provides high thermal conductivity and
a subsequently low junction temperature. This
device is capable of operating at a duty cycle of
100 percent.
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
efficiency
Circuitry
V
Ramp
CC0
Stage 2
GND
tm
tm
V
Preliminary Information
applications.
RAMP
2.4 GHz radio applications. It
OUT/ V
making
CC2
tm
specification 1.1.
it
PA2423G
capable
At typical
Page 1
of

Related parts for PA2423G-EV

PA2423G-EV Summary of contents

Page 1

... Power-control and Power-down modes -40C to +85C temperature range Gold bump bare die (0.63mm x 0.96mm) Ordering Information Part Package Gold bump bare PA2423G die PA2423G-EV Evaluation kit Functional Block Diagram IN Stage 1 GND DOC # 05PDS003 Rev 5 2.4 GHz Bluetooth Class 1 Power Amplifier IC Product Description ...

Page 2

... X = 672µm ± 10µ 115µm ± 10µ 512µm ± 10µ 115µm ± 10µ 352µm ± 10µ 115µm ± 10µ 192µm ± 10µ 115µm ± 10µm Parameter Min. -0.3 -0.3 -0.3 -40 -40 07/26/2001 PA2423G Preliminary Information (lower left corner is (0.0)) Max. Unit +3 ...

Page 3

... Pin CTL = 0V RAMP =3.3V,P =+2 dBm, T =25° 2.45GHz, CTL IN A Parameter =+2 dBm,V = 3.3V IN CTL =+2 dBm,V =0.4V IN CTL <+85°C), V =3.3V A CTL =+2dBm,V =0V IN RAMP =25°C. A 07/26/2001 PA2423G Preliminary Information Min. Typ. Max. Unit 3.0 3.3 3.6 V 120 150 µA 200 250 2.0 V 0.8 V µA 0.5 10 Min Typ. ...

Page 4

... SILICON 07/26/2001 PA2423G Preliminary Information 7 65µm±10µm 8 Gold Page 4 ...

Page 5

... PA2423G Preliminary Information 65µm±10µm 65µm±10µ Page 5 ...

Page 6

... Typical Performance Characteristics SiGe PA2423G-EV evaluation board, V 2.45GHz, Input and Output externally matched to 50Ω, unless otherwise noted) Pout, Icc vs Supply Voltage 2.4 2.6 2.8 3 3.2 3.4 Vcc(V) Pout Icc Supply Current vs Control Voltage 140 120 100 0.4 0.9 1.4 1.9 2.4 Vctl(V) ...

Page 7

... Frequency (GHz) DOC # 05PDS003 Rev 5 2.4 GHz Bluetooth Class 1 Power Amplifier IC 30.00 24.0 25.00 23.0 20.00 22.0 21.0 15.00 20.0 10.00 19.0 5.00 18.0 8 2.2 Harmonic Output Spectrum -10 -20 -30 -40 -50 2.6 2 2.4515 2.4525 07/26/2001 PA2423G Preliminary Information Pout vs Frequency 2.3 2.4 2.5 2.6 2.7 Frequency (GHz Frequency (GHz) Page 7 ...

Page 8

... Applications Information For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423G. The order part number is PA2423G-EV. The evaluation board is intended to simplify the testing with respect to RF performance of this power amplifier. The application note, 05AN007 provides the supporting information for using the evaluation board. It contains information on the schematic, bill of materials and recommended layout for the power amplifier and the input and output matching networks ...

Page 9

... Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 2680 Queensview Drive Ottawa ON K2B 8J9 Canada sales@sige.com United Kingdom 1010 Cambourne Business Park Cambourne Cambridge CB3 6DP Phone: +44 1223 598 444 Fax: 07/26/2001 PA2423G Preliminary Information +44 1223 598 035 Page 9 ...

Related keywords