PA2423G-EV SiGe Semiconductor Inc., PA2423G-EV Datasheet - Page 8

• Manufacturer Part Number: PA2423G-EV
• Description: 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
• Manufacturer: SiGe Semiconductor Inc.

Applications Information
For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423G. The order
part number is PA2423G-EV. The evaluation board is intended to simplify the testing with respect to RF
performance of this power amplifier.
The application note, 05AN007 provides the supporting information for using the evaluation board. It contains
information on the schematic, bill of materials and recommended layout for the power amplifier and the input
and output matching networks. To assist in the design process, this layout is available, upon request, in
gerber file format.
Using V
V
Bluetooth
between the radio and the antenna while consuming a modest 1uA. In transmit mode, V
to VCC and PA2423G offers 19 dB to 21dB of large signal gain. The rise and fall time are in the order of 1-
2usec.
Using V
V
Vcc will adjust the gain between -15dB and 21 dB. Used in combination with a variable drive level to
PA2423G, the V
power levels.
By applying approximately 1.4V to V
the PA2423G consuming only 15mA.
By implementing a resistor DAC, the V
programmable outputs.
DOC # 05PDS003 Rev 5
RAMP
CTL
is an analog pin that is designed to control the gain of PA2423G. Applying a voltage between 0V and
is a digital pin used to power-up and power-down the PA2423G in Time Duplex systems such as
RAMP
CTL
tm
1.1. During receive mode, V
CTL
function can greatly optimize the PAE of the system at all four Bluetooth
CTL
RAMP
, for example, a Class1 radio can be modified to a Class2 radio with
CTL
pin can interface with Bluetooth
voltage is pulled down, PA2423G acts as a 25 dB isolation block
07/26/2001
2.4 GHz Bluetooth Class 1 Power Amplifier IC
tm
transceivers offering digital and
Preliminary Information
RAMP
voltage is pulled
PA2423G
tm
transmitted
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