PA2423L-EV SiGe Semiconductor Inc., PA2423L-EV Datasheet

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PA2423L-EV

Manufacturer Part Number
PA2423L-EV
Description
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Manufacturer
SiGe Semiconductor Inc.
Datasheet
Applications
Features
Ordering Information
PA2423L
PA2423L-EV
Functional Block Diagram
DOC# 05PDS002 Rev 4
(1.6mm x 3.0mm)
Bluetooth
USB Dongles
Laptops
Access Points
Cordless Piconets
+22.5dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature rating: -40C to +85C
Very small plastic package - 6 lead LPCC
Type
tm
Class 1
6 - LPCC
Evaluation kit
Package
IN
Stage 1
GND
Tape and reel
Tubes -samples
Shipping
Method
Bias Generator
07/26/2001
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Interstage
Match
V
V
CTL
CC1
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423L is designed for
class 1 Bluetooth
delivers +22.5 dBm output power with 45%
power-added efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
class 1 Bluetooth
The amplifier features:
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB
specification 1.1.
The PA2423L operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423L – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
overshoot,
Circuitry
V
Ramp
CC0
Stage 2
GND
tm
tm
V
Preliminary Information
RAMP
applications.
2.4 GHz radio applications. It
meeting
OUT/ V
CC2
the
PA2423L
Page 1 of 11
Bluetooth
tm

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PA2423L-EV Summary of contents

Page 1

... Temperature rating: -40C to +85C Very small plastic package - 6 lead LPCC (1.6mm x 3.0mm) Ordering Information Type Package PA2423L 6 - LPCC Tape and reel Tubes -samples PA2423L-EV Evaluation kit Functional Block Diagram IN Stage 1 GND DOC# 05PDS002 Rev 4 2.4 GHz Bluetooth Class 1 Power Amplifier IC Product Description A monolithic, high-efficiency, silicon-germanium ...

Page 2

... PA Output and Stage2 collector supply voltage, external output matching network 6 OUT/V CC2 with DC blocking is required Die Pad GND Heatslug Die Pad is ground DOC# 05PDS002 Rev 4 2.4 GHz Bluetooth Class 1 Power Amplifier IC BOTTOM VIEW Description 07/26/2001 PA2423L Preliminary Information 1 1 Die Die Page ...

Page 3

... P = +2dBm,T =25° 2.45GHz, CTL IN A noted. Parameter = 3.3V CC VCC0 VCC1 VCC2 CTL = 25°C A Pin CTL = 0V high ramp ctl 07/26/2001 PA2423L Preliminary Information Max. Unit +3 dBm °C +85 +150 °C °C +150 Min. Typ. Max. Unit 3 3.3 3.6 ...

Page 4

... Notes: (1) Guaranteed by production test at T (2) Guaranteed by design only (3) Guaranteed by design and characterization (4) Harmonic levels are greatly affected by topology of external matching networks. Typical Performance Characteristics Test Conditions: SiGe PA2423L-EV 2.45GHz, Input and Output externally matched to 50Ω, unless otherwise noted. Pout, Icc vs Supply Voltage 24 23 ...

Page 5

... Input Power(dBm) DOC# 05PDS002 Rev 4 2.4 GHz Bluetooth Class 1 Power Amplifier IC Pout vs Frequency 23. 0 22. 5 22. 0 21. 5 21. 0 20. 5 20. 0 19. 5 19 07/26/2001 PA2423L Preliminary Information Frequency (GHz) Page ...

Page 6

... GHz Bluetooth Class 1 Power Amplifier IC Output Power vs Control Voltage -10 -15 -20 -25 0.4 0.9 2.9 3.4 Pin=-4dBm Pin=+2dBm Harmonic Output Spectrum -10 -15 -20 -25 -30 -35 -40 -45 -50 2.6 2 07/26/2001 PA2423L Preliminary Information 1.4 1.9 2.4 2.9 3.4 Vctl(V) Pin=0dBm Frequency (GHz) Page ...

Page 7

... PA output spectrum with BT modulated signal -10 -20 -30 -40 -50 -60 2.4475 2.4485 2.4495 2.4505 Frequency (GHz) DOC# 05PDS002 Rev 4 2.4 GHz Bluetooth Class 1 Power Amplifier IC 2.4515 2.4525 07/26/2001 PA2423L Preliminary Information Page ...

Page 8

... Package Dimensions The PA2423L is packaged lead LPCC package. The underside of the package is an exposed die-pad structure. This allows for direct soldering to the PCB for enhanced thermal conductivity. The package dimensions are shown in the drawing below. DOC# 05PDS002 Rev 4 ...

Page 9

... Applications Information For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423L. The order part number for the evaluation board is PA2423L-EV. The evaluation board is intended to simplify the testing with respect to RF performance of this power amplifier. The application note, 05AN006 provides the supporting information for using the evaluation board. ...

Page 10

... Using V CTL analog pin that is designed to control the gain of PA2423L. Applying a voltage between 0V and CTL Vcc will adjust the gain between -15dB and 21 dB. Used in combination with a variable drive level to PA2423L, the V function can greatly optimize the PAE of the system at all four Bluetooth CTL power levels ...

Page 11

... Fax: +1 613 820 4933 2680 Queensview Drive sales@sige.com United Kingdom 1010 Cambourne Business Park Cambourne Cambridge CB3 6DP Phone: +44 1223 598 444 Fax: SiGe Semiconductor Inc. products are NOT authorized for use in 07/26/2001 PA2423L Preliminary Information +44 1223 598 035 Page ...

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