PA2423L-EV SiGe Semiconductor Inc., PA2423L-EV Datasheet - Page 3

• Manufacturer Part Number: PA2423L-EV
• Description: 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
• Manufacturer: SiGe Semiconductor Inc.

Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: V
DOC# 05PDS002 Rev 4
Symbol
∆Icc
V
V
I
V
I
I
RAMP
stdby
CTL
CC
CTL
CC
temp
Input and Output externally matched to 50Ω ,unless otherwise
CC0
1
3
1
3
3
1
Note
= V
V
V
V
IN
T
T
T
Symbol
CC
CTL
RAMP
A
STG
j
CC1
= V
Supply Voltage
Supply Current (I
Supply Current variation over temperature from T
(-40°C <T
PA Output Power Control Voltage Range
Current sourced by V
Logic High Voltage
Logic Low Voltage
Leakage Current when V
CC2
= V
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
A
RAMP
<+85°C)
= 3.3V, V
CC
Parameter
= I
CTL
VCC0
ramp
Parameter
CTL
Pin
+ I
07/26/2001
= 0V, V
= 3.3V, P
2.4 GHz Bluetooth Class 1 Power Amplifier IC
VCC1
+I
ctl
= high
IN
VCC2
= +2dBm,T
), V
-0.3
-0.3
-0.3
-40
-40
Min.
CTL
noted.
A
= 3.3V
= 25°C
A
=25°C, f = 2.45GHz,
Max.
+150
+150
+3.6
V
V
+85
+8
CC
CC
Preliminary Information
Min.
2.0
3
0
V
V
V
dBm
°C
°C
°C
Unit
Typ.
125
200
3.3
0.5
25
PA2423L
Page 3 of 11
Max.
V
150
250
3.6
0.8
10
CC
Unit
mA
µA
µA
%
V
V
V
V