M40Z300W ST Microelectronics, M40Z300W Datasheet - Page 6

• Manufacturer Part Number: M40Z300W
• Description: NVRAM CONTROLLER for up to EIGHT LPSRAM
• Manufacturer: ST Microelectronics

M40Z300, M40Z300W
Table 5. Capacitance
(T
Note: 1. Sampled only, not 100% tested.
Table 6A. DC Characteristics for M40Z300
(T
Note: 1. Outputs deselected.
6/16
Symbol
A
A
Symbol
I
V
I
I
V
I
C
CCDR
THS
V
OUT1
OUT2
V
= 25 °C, f = 1 MHz)
= 0 to 70°C; V
LI
V
V
I
V
C
OHB
CC
PFD
2. Outputs deselected.
2. For RST & BL pins (Open Drain).
3. Chip Enable outputs (E1
4. Measured with V
OUT
OH
OL
SO
IH
IL
(1)
IN
Higher leakage currents will reduce battery life.
Input Leakage Current
Supply Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage (open drain)
Output High Voltage
V
V
V
Data Retention Mode Current
Threshold Select Voltage
Power-fail Deselect Voltage (THS = V
Power-fail Deselect Voltage (THS = V
Battery Back-up Switchover Voltage
Input Capacitance
Output Capacitance
OH
OUT
OUT
Battery Back-up
Current (Active)
Current (Battery Back-up)
CC
OUT
= 4.75V to 5.5V or 4.5V to 5.5V)
(1)
and E1
CON
Parameter
Parameter
CON
- E4
(3)
- E4
CON
) can only sustain CMOS leakage currents in the battery back-up mode.
CON
(4)
open.
(2)
SS
OUT
)
)
V
V
V
Test Condition
0V
I
OUT
OUT2
OUT
OUT
I
Outputs open
OH
I
I
Test Condition
OL
OL
V
> V
= –2.0mA
> V
> V
V
= 4.0mA
= 10mA
V
OUT
= –1.0µA
IN
IN
BAT
CC
CC
= 0V
= 0V
V
–0.3
–0.2
–0.3
CC
–0.3
Min
V
2.2
2.4
2.0
4.5
4.2
SS
Min
4.35
Typ
100
2.9
4.6
3.0
3
Max
V
10
8
CC
V
Max
4.75
250
150
100
0.8
0.4
0.4
3.6
4.5
±1
OUT
6
+ 0.3
Unit
pF
pF
Unit
mA
mA
mA
µA
µA
nA
V
V
V
V
V
V
V
V
V
V