ISPLSI2032 Lattice Semiconductor, ISPLSI2032 Datasheet - Page 10

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ISPLSI2032

Manufacturer Part Number
ISPLSI2032
Description
(ISPLSI2032/A) In-System Programmable SuperFAST High Density PLD
Manufacturer
Lattice Semiconductor
Datasheet

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Power consumption in the ispLSI 2032 and 2032A de-
vices depends on two primary factors: the speed at which
the device is operating and the number of Product Terms
Figure 4. Typical Device Power Consumption vs fmax
I CC can be estimated for the ispLSI 2032/A using the following equation:
For 2032/A -150, -180: I CC (mA) = 30 + (# of PTs * 0.46) + (# of nets * Max freq * 0.012)
For 2032/A -135, -110, -80: I CC (mA) = 21 + (# of PTs * 0.30) + (# of nets * Max freq * 0.012)
Where:
The I CC estimate is based on typical conditions (V CC = 5.0V, room temperature) and an assumption of two GLB loads
on average exists. These values are for estimates only. Since the value of I CC is sensitive to operating conditions
and the program in the device, the actual I CC should be verified.
Power Consumption
# of PTs = Number of Product Terms used in design
# of nets = Number of Signals used in device
Max freq = Highest Clock Frequency to the device (in MHz)
120
110
100
90
80
70
60
50
40
1
20
ispLSI 2032/A (-150, -180)
Notes: Configuration of Two 16-bit Counters
40
Typical Current at 5V, 25° C
60
10
f
max (MHz)
used. Figure 4 shows the relationship between power
and operating speed.
80
ispLSI 2032/A (-80, -110, -135)
Specifications ispLSI 2032/A
100 120 140 160 180
0127A/2032A

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