K4S640832F-TL75 Samsung semiconductor, K4S640832F-TL75 Datasheet
K4S640832F-TL75
Related parts for K4S640832F-TL75
K4S640832F-TL75 Summary of contents
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... K4S640832F * Samsung Electronics reserves the right to change products or specification without notice. 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 CMOS SDRAM Rev.1.1 May. 2003 ...
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... K4S640832F Revision History Revision 0.0 (June, 2001) Revision 0.1 (Sep., 2001) • Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. < After > 5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. ...
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... Samsung Electronics reserves the right to change products or specification without notice. * GENERAL DESCRIPTION The K4S640832F is 67,108,864 bits synchronous high data rate Dynamic RAM organized 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...
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... K4S640832F PIN CONFIGURATION (Top view) PIN FUNCTION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable Address Bank select address 0 1 RAS Row address strobe CAS Column address strobe WE Write enable DQM Data input/output mask DQ ~ Data input/output ...
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... K4S640832F ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S640832F-TC** 4. K4S640832F-TL** 5. Unless otherwise noted, input swing IeveI is CMOS °C) A Test Condition Burst length = 1 ≥ (min CKE ≤ V ...
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... K4S640832F AC OPERATING TEST CONDITIONS Parameter Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870Ω (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) ...
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... K4S640832F AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time ...
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... K4S640832F IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage 133MHz 133MHz Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77.9 -269.7 1.4 -80.8 -284.3 1.0 -88.6 -344.5 0.0 -93.0 -502.4 I Characteristics (Pull-down) OL 100MHz 100MHz Voltage 133MHz 133MHz Min Max (V) I (mA) I (mA) 0 0.0 0.0 0.4 27.5 70.2 0.65 41.8 107.5 0.85 51.6 133.8 1 58.0 151.2 1.4 70.7 187.7 1.5 72.9 194.4 1.65 75.4 202.5 1 ...
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... K4S640832F V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) SS -2.6 -57.23 -2.4 -45.77 -2.2 -38.26 -2.0 -31.22 -1.8 -24.58 -1.6 -18.37 -1.4 -12.56 -1.2 -7.57 -1.0 -3.37 -0.9 -1.75 -0.8 -0.58 -0.7 -0.05 -0.6 0.0 -0.4 0.0 -0.2 0.0 0.0 0.0 Minimum V clamp current DD (Referenced Voltage I (mA) Minimum V clamp current -10 -20 -30 -40 -50 -60 Voltage I (mA) CMOS SDRAM ...
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... K4S640832F SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable Column Address Auto precharge enable Burst stop ...