K4S511632M-TC Samsung semiconductor, K4S511632M-TC Datasheet
K4S511632M-TC
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K4S511632M-TC Summary of contents
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... K4S511632M 512Mbit SDRAM Samsung Electronics reserves the right to change products or specification without notice 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 CMOS SDRAM Rev. 0.3 May. 2002 ...
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... K4S511632M Revision History Revision 0.0 (Mar. 2001) Revision 0.1 (Aug. 2001) Defined target DC characteristics. Revision 0.2 (Dec. 2001) • Changed "Target" to "Preliminary". • Redefined DC characteristics. Revision 0.3 (May. 2002) • Changed "Preliminary" to "Final". CMOS SDRAM Rev. 0.3 May. 2002 ...
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... Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION K4S511632M-TC/TL75 K4S511632M-TC/TL1H K4S511632M-TC/TL1L Data Input Register Column Decoder Latency & Burst Length Programming Register LWE LCAS ...
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... K4S511632M PIN CONFIGURATION (Top view) PIN FUNCTION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable Address Bank select address 0 1 RAS Row address strobe CAS Column address strobe WE Write enable DQM Data input/output mask DQ ~ Data input/output ...
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... K4S511632M ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... I CC3 Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S511632M-TC** 4. K4S511632M-TL** 5. Unless otherwise noticed, input swing level is CMOS Test Condition Burst length = (min ...
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... K4S511632M AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter ...
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... K4S511632M AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time ...
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... K4S511632M IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77.9 -269.7 1.4 -80.8 -284.3 1.0 -88.6 -344.5 0.0 -93.0 -502.4 I Characteristics (Pull-down) OL 100MHz 100MHz Voltage Min Max (V) I (mA) I (mA) 0.0 0.0 0.0 0.4 27.5 70.2 0.65 41.8 107.5 0.85 51.6 133.8 1.0 58.0 151.2 1.4 70.7 187.7 1.5 72.9 194.4 1.65 75.4 202.5 1.8 77.0 208.6 1.95 77.6 212.0 3.0 80.3 219.6 3.45 81.4 222.6 0 0.5 0 66MHz ...
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... K4S511632M V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) SS -2.6 -57.23 -2.4 -45.77 -2.2 -38.26 -2.0 -31.22 -1.8 -24.58 -1.6 -18.37 -1.4 -12.56 -1.2 -7.57 -1.0 -3.37 -0.9 -1.75 -0.8 -0.58 -0.7 -0.05 -0.6 0.0 -0.4 0.0 -0.2 0.0 0.0 0.0 Minimum V clamp current DD (Referenced Voltage I (mA) Minimum V clamp current -10 -20 -30 -40 -50 -60 Voltage I (mA) Rev. 0.3 May. 2002 ...
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... K4S511632M SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable Burst stop ...