K4S641632E Samsung semiconductor, K4S641632E Datasheet - Page 4

• Manufacturer Part Number: K4S641632E
• Description: 64Mbit SDRAM
• Manufacturer: Samsung semiconductor

Note :
Notes :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS
Notes :
CAPACITANCE
Recommended operating conditions (Voltage referenced to V
K4S641632E
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. The VDD condition of K4S641632E-55/60 is 3.135V~3.6V.
1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
15
IH
IL
Parameter
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ
.
A
V
Symbol
DD
= 23 C, f = 1MHz, V
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
Symbol
C
C
C
V
V
C
Symbol
ADD
OUT
DD
CLK
IN
IN
T
Min
-0.3
3.0
2.0
2.4
-10
, V
I
P
, V
STG
OS
-
D
REF
OUT
DDQ
SS
= 0V, T
=1.4V 200 mV)
3ns.
3ns.
A
Min
2.5
2.5
2.5
4.0
Typ
= 0 to 70 C)
3.3
3.0
0
-
-
-
V
-55 ~ +150
DD
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
Max
3.6
0.8
0.4
10
4.0
5.0
5.0
6.5
Value
-
+0.3
50
1
Rev.0.2 Sept. 2001
Unit
uA
V
V
V
V
V
Unit
CMOS SDRAM
pF
pF
pF
pF
I
I
OH
OL
Unit
mA
W
V
V
C
Note
= -2mA
= 2mA
Note
1
2
3
1
2
2
3