K4S641632F Samsung semiconductor, K4S641632F Datasheet - Page 8

• Manufacturer Part Number: K4S641632F
• Description: 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: Samsung semiconductor

AC CHARACTERISTICS
Notes :
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Notes :
CLK cycle
time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
K4S641632F
Output rise time
Output fall time
Output rise time
Output fall time
Parameter
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
1. Rise time specification based on 0pF + 50
2. Fall time specification based on 0pF + 50
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
Parameter
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
Symbol
trh
trh
tfh
tfh
t
t
t
t
t
t
(AC operating conditions unless otherwise noted)
SAC
t
t
t
SHZ
SLZ
OH
CC
CH
SS
SH
CL
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
1.5
5
2
2
2
1
1
-
-
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
- 50
1000
Condition
4.5
4.5
-
-
SS
5.5
1.5
.
2
2
2
1
1
-
-
to V
to V
- 55
1000
DD
SS
5
5
-
-
, use these values to design to.
, use these values to design to.
2.5
2.5
2.5
1.5
6
1
1
-
-
- 60
1.37
1.30
1000
Min
2.8
2.0
5
5
-
-
7
3
3
3
2
1
1
-
-
- 70
1000
Typ
6
6
3.9
2.9
-
-
7.5
2.5
2.5
1.5
0.8
10
3
3
1
- 75
1000
5.4
5.4
6
6
Max
4.37
3.8
5.6
5.0
10
10
Rev.0.1 Sept. 2001
3
3
3
3
2
1
1
- 1H
CMOS SDRAM
1000
6
6
6
6
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Unit
10
12
3
3
3
3
2
1
1
- 1L
1000 ns
6
7
6
7
Notes
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
1,2
1,2
3
3
1,2
1
2
3
3
3
3
2