K4S560832D Samsung semiconductor, K4S560832D Datasheet - Page 5

• Manufacturer Part Number: K4S560832D
• Description: 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: Samsung semiconductor

ABSOLUTE MAXIMUM RATINGS
K4S560832D
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. -75/7C only specify a maximum value of 3.5pF
2. -75/7C only specify a maximum value of 3.8pF
3. -75/7C only specify a maximum value of 6.0pF
1. V
2. V
3. Any input 0V ≤ V
Parameter
15
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
Parameter
(max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
supply relative to Vss
Pin
(V
DD
IN
= 3.3V, T
≤ V
DDQ
V
A
.
Symbol
DD
= 23°C, f = 1MHz, V
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
Symbol
V
C
C
C
V
C
Symbol
DD
ADD
OUT
CLK
IN
Min
-0.3
-10
3.0
2.0
2.4
IN
T
, V
I
P
-
, V
STG
OS
D
REF
OUT
DDQ
SS
=1.4V ± 200 mV)
= 0V, T
A
Min
Typ
2.5
2.5
2.5
4.0
= 0 to 70°C)
3.3
3.0
0
-
-
-
V
-55 ~ +150
DD
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
Max
4.0
5.0
5.0
6.5
-
Value
+0.3
50
1
Rev. 1.1 May. 2003
Unit
uA
V
V
V
V
V
Unit
CMOS SDRAM
pF
pF
pF
pF
I
Unit
I
OH
mA
OL
°C
W
V
V
Note
= -2mA
Note
= 2mA
1
2
3
1
2
2
3