K6R1016C1 Samsung semiconductor, K6R1016C1 Datasheet
K6R1016C1
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K6R1016C1 Summary of contents
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... SAMSUNG branch office near your office, call or contact Headquarters. Draft Data May. 11. 2001 June. 18. 2001 September. 9. 2001 December. 18. 2001 Previous Current 100mA 90mA 85mA 75mA February. 14. 2002 June. 19. 2002 - 1 - for AT&T CMOS SRAM Remark Preliminary Preliminary Preliminary Final Final Final Revision 3.0 June 2002 ...
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... K6R1016V1D 1Mb Async. Fast SRAM Ordering Information Org. Part Number K6R1004C1D-JC(I) 10/12 256K x4 K6R1004V1D-JC(I) 08/10 K6R1008C1D-J(T)C(I) 10/12 128K x8 K6R1008V1D-J(T)C(I) 08/10 K6R1016C1D-J(T,E)C(I) 10/12 64K x16 K6R1016V1D-J(T,E)C(I) 08/10 VDD(V) Speed ( ns ) PKG 5 10/ 32-SOJ 3.3 8/10 5 10/ 32-SOJ T : 32-TSOP2 3.3 8/10 5 10/ 44-SOJ T : 44-TSOP2 3.3 8/ 48-TBGA - 2 - for AT&T CMOS SRAM Temp. & Power C : Commercial Temperature ...
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... Pin Name I for AT&T CMOS SRAM Pin Function Address Inputs Write Enable Chip Select Output Enable Lower-byte Control(I/O ~I Upper-byte Control(I/O ~I Data Inputs/Outputs Power(+3.3V) Ground No Connection Revision 3.0 June 2002 ...
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... IN OUT STG Min Typ 3 -0.3 ( 20mA 20mA for AT&T CMOS SRAM N I/O9 I/ I/O11 I/O10 I/O4 N.C A7 I/O12 Vcc I/O5 N.C N.C I/O13 Vss I/O6 A14 A15 I/O14 I/O15 N.C A12 A13 ...
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... =8mA OL =-4mA OH Test Conditions C V =0V I Output Loads(B) for WHZ = 1.5V L 30pF* * Including Scope and Jig Capacitance - 5 - for AT&T CMOS SRAM Min Max Unit - 8ns - 80 mA 10ns - 65 8ns - 90 10ns - 0 MIN ...
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... K6R1016V1D-08 Min Max (Address Controlled CS=OE for AT&T CMOS SRAM K6R1016V1D-10 Unit Min Max K6R1016V1D-10 ...
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... Valid Data t PU 50% (Max.) is less than t (Min.) both for a given device and from device IL. (OE =Clock CW( AS(4) WP( High-Z Valid Data t OHZ( for AT&T CMOS SRAM t HZ(3,4,5) t BHZ(3,4,5) t OHZ 50 WR( High-Z Revision 3.0 June 2002 ...
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... Data in High-Z Data out (OE =Low fixed CW( WP1(2) AS( High-Z Valid Data t WHZ(6) High-Z (CS=Controlled CW( WP(2) AS( Valid Data WHZ( for AT&T CMOS SRAM t WR( (9) (10 WR( High-Z High-Z(8) Revision 3.0 June 2002 ...
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... X Not Select High-Z X Output Disable High OUT Read L High OUT Write L High for AT&T CMOS SRAM t WR( High-Z(8) is measured from the beginning of write WP Supply Current I/O ~I High SB1 High High OUT D OUT ...
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... TYP #23 11.76 0.20 0.463 0.008 #22 1.00 1.20 0.10 MAX 0.039 0.047 0.004 0.10 MAX 0.05 0.004 MIN 0.80 0.002 0.0315 - 10 for AT&T CMOS SRAM Units:millimeters/Inches 9.40 0.25 0.370 0.010 +0.10 0.20 -0.05 +0.004 0.008 -0.002 0.69 MIN 0.027 1. 0.047 3.76 1.27 MAX 0.148 ( ) 0.050 0.10 MAX 0.004 Units:millimeters/Inches 0~8 0.45 ~0.75 0.018 ~ 0.030 0. 0.020 + 0 ...
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... Detail A Max - Notes. 6.10 1. Bump counts: 48(8 row x 6 column) 2. Bump pitch: (x,y)=(0.75 x 0.75)(typ All tolerence are +/-0.050 unless 7.10 otherwise specified Typ: Typical 0. coplanarity: 0.08(Max) 1.00 - 0.40 0. for AT&T CMOS SRAM Unit: millimeters Revision 3.0 June 2002 ...