K6R4016V1 Samsung semiconductor, K6R4016V1 Datasheet
K6R4016V1
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K6R4016V1 Summary of contents
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... Current 90mA 65mA 80mA 55mA 70mA 45mA 115mA 85mA 100mA 75mA 85mA 65mA 30mA 20mA 10mA 5mA November, 3. 2001 December, 18. 2001 Previous Current 85mA 75mA 75mA 65mA July, 09, 2002 - 1 - PRELIMINARY CMOS SRAM Remark Preliminary Preliminary Preliminary Preliminary Final Rev 1.0 July 2002 ...
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... K6R4004C1D 4Mb Async. Fast SRAM Ordering Information Org. Part Number K6R4004C1D-JC( K6R4004V1D-JC(I) 08/10 K6R4008C1D-J(T)C(I) 10 512K x8 K6R4008V1D-J(T)C(I) 08/10 K6R4016C1D-J(T,E)C(I) 10 256K x16 K6R4016V1D-J(T,E)C(I,L,P) 08/10 VDD(V) Speed ( ns ) PKG 32-SOJ 3.3 8/ 36-SOJ T : 44-TSOP2 3.3 8/ 44-SOJ T : 44-TSOP2 3.3 8/ 48-TBGA - 2 - PRELIMINARY CMOS SRAM Temp. & Power C : Commercial Temperature ,Normal Power Range ...
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... PIN FUNCTION Pin Name I PRELIMINARY CMOS SRAM (Top View I Vss 25 SOJ Vcc 24 I ...
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... V I =0mA IL IL, OUT Ind. IH -0.2V -0. 0. =8mA OL =-4mA OH Symbol Test Conditions C V =0V I PRELIMINARY CMOS SRAM Rating Unit 0.5 V CC+ -0.5 to 7.0 V 1.0 W -65 to 150 - Max Unit 5 +0.5 0.8 Min Max Unit -2 2 ...
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... HZ LZ WHZ 1. 30pF* 255 * Including Scope and Jig Capacitance K6R4004C1D-10 Min PRELIMINARY CMOS SRAM Value 3ns 1.5V See below , t & t OLZ OHZ +5.0V 480 OUT 5pF* Unit Max - ...
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... (WE OLZ t LZ(4,5) Valid Data t PU 50% (Max.) is less than t (Min.) both for a given device and from device IL PRELIMINARY CMOS SRAM K6R4004C1D-12 Unit Max - Valid Data t HZ(3,4,5) t OHZ t ...
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... CW( WP(2) AS(4) t Valid Data t OHZ(6) High-Z(8) (OE=Low Fixed CW( AS(4) WP1( Valid Data t WHZ(6) High-Z(8) (CS=Controlled CW( WP(2) AS( Valid Data WHZ( PRELIMINARY CMOS SRAM t WR( WR( (9) (10) t WR( High-Z High-Z(8) Rev 1.0 July 2002 ...
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... WP applied in case a write ends going high. WR Mode I/O Pin Not Select High-Z Output Disable High-Z Read D OUT Write PRELIMINARY CMOS SRAM Supply Current SB1 Rev 1.0 July 2002 ...
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... K6R4004C1D PACKAGE DIMENSIONS 32-SOJ-400 #32 11.18 0.12 0.440 0.005 #1 +0.10 0.43 -0.05 0. +0.004 0.017 0.0375 -0.002 #17 #16 21.36 MAX 0.841 20.95 0.12 0.825 0.005 1.30 ( 0.051 1.30 ( 0.051 +0.10 0.71 -0.05 1.27 +0.004 0.028 0.050 -0.002 - 9 - PRELIMINARY CMOS SRAM Units:millimeters/Inches 9.40 0.25 0.370 0.010 +0.10 0.20 -0.05 +0.004 0.008 -0.002 0.69 MIN 0.027 ) 0.10 3.76 MAX MAX 0.004 ) 0.148 Rev 1.0 July 2002 ...