AM29BL802CB-80RDGE1 SPANSION [SPANSION], AM29BL802CB-80RDGE1 Datasheet
AM29BL802CB-80RDGE1
Related parts for AM29BL802CB-80RDGE1
AM29BL802CB-80RDGE1 Summary of contents
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Am29BL802C Known Good Die Data Sheet Continuity of Specifications Continuity of Ordering Part Numbers For More Information Qˆiyvph‡v‚ÃIˆ€ir… à !"%(# 6 ! à Sr‰v†v‚ à 6€rq€r‡ à à D††ˆrÃ9h‡r à Trƒ‡r€ir…à "Ã!! ...
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SUPPLEMENT Am29BL802C Known Good Die 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS 32 words sequential with wrap around (linear 32), bottom boot One 8 Kword, two 4 Kword, one ...
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GENERAL DESCRIPTION The Am29BL802C in Known Good Die (KGD) form Mbit, 3.0 volt-only Flash memory. AMD defines KGD as standard product in die form, tested for function- ality and speed. AMD KGD products have the same reli- ...
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PRODUCT SELECTOR GUIDE Family Part Number Speed (ns) Regulated Voltage Range: V Max access time ACC IACC Max CE# access time Max OE# access time ...
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AC CHARACTERISTICS Burst Mode Read Parameter JEDEC Std. Description Initial Access Time t LBA# Valid Clock to Output Delay IACC (See Note) Burst Access Time t BACC BAA# Valid Clock to Output Delay t LBA# Setup Time LBAS t LBA# ...
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AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH ...
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AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH ...
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DIE PHOTOGRAPH DIE PAD LOCATIONS ...
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PAD DESCRIPTION Pads relative to die center. Pad Center (mils) Pad Signal WE# –3.11 98.18 2 RESET# –13.41 98.18 3 RY/BY# –23.34 98.18 4 A18 –33.39 98.18 5 A17 –43.44 98. –53.49 98. ...
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PAD DESCRIPTION Pads relative Pad Center (mils) Pad Signal WE# –26.21 0.00 2 RESET# –36.51 0.00 3 RY/BY# –46.44 0.00 4 A18 –56.49 0.00 5 A17 –66.54 0. –76.59 0.00 7 ...
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... DEVICE NUMBER/DESCRIPTION Am29BL802C Known Good Die 8 Megabit (512 K x 16-Bit) CMOS Flash Memory—Die Revision 1 3.0 Volt-only Program and Erase Valid Combinations DPI 1, DPE 1, DPH 1 AM29BL802CB-80R DGI 1, DGE 1, DGH 1 (30 pF loading) DTI 1, DTE 1, DTH 1 DWI 1, DWE 1, DWH ...
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PACKAGING INFORMATION Surftape Packaging Direction of Feed Gel-Pak and Waffle Pack Packaging Orientation relative to top left corner of Gel-Pak and Waffle Pack cavity plate Am29BL802C Known Good Die Orientation ...
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PRODUCT TEST FLOW Figure 1 provides an overview of AMD’s Known Good Die test flow. For more detailed information, refer to the Am29BL802C product qualification database supple- ment for KGD. AMD implements quality assurance pro- cedures throughout the product test ...
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PHYSICAL SPECIFICATIONS Die dimensions . . . . . . . . . . . 269.7 mils x 214.2 mils . . . . . . . . . . . . . . . . . . . . ...
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AC CHARACTERISTICS Read Operations Parameter JEDEC Std. Description t t Read Cycle Time (Note ) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...
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TERMS AND CONDITIONS OF SALE FOR AMD NON-VOLATILE MEMORY DIE All transactions relating to unpackaged die under this agreement shall be subject to AMD’s standard terms and conditions of sale, or any revisions thereof, which revisions AMD reserves the right ...
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REVISION SUMMARY Revision A (December 19, 2000) Initial release. Revision A+1 (June 27, 2001) Manufacturing Information Added Penang, Malaysia as a test facility (ACN2016). Trademarks Copyright © 2001 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and ...