CXA3010 Sony Corporation, CXA3010 Datasheet

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CXA3010

Manufacturer Part Number
CXA3010
Description
Read/Write Amplifier (with Built-in Filters) for FDDs
Manufacturer
Sony Corporation
Datasheet

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Part Number
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Quantity
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Part Number:
CXA3010Q
Manufacturer:
NXP
Quantity:
100
For the availability of this product, please contact the sales office.
Description
with three-mode Floppy Disk Drives, and contains a
read circuit (with a four-mode filter system), a write
circuit, an erase circuit, and a supply voltage
detection circuit, all on a single chip.
Features
• Single 5V power supply
• Filter system can be switched among four modes:
• Filter characteristics can be set to Chebyshev
• A custom selection can be made between
• Permits customization of the fc ratio
• Low preamplifier input conversion noise voltage of
• Preamplifier voltage gain can be switched between
• In inner track mode (OTF = Low), the voltage gain
• Time domain filter can be switched between two
• Write current can be switched among three
• Erase current can be set by an external resistor,
• Damping resistor can be built in. Resistance can
• Supply voltage detection circuit
The CXA3010Q is a monolithic IC designed for use
1M, 1.6M/2M, which are each inner track/outer
track
(1dB ripple) for 1.6M, 2M/inner track only, and to
Butterworth for the other modes
Chebyshev (1dB ripple) and Butterworth for the
filter characteristics for 1.6M, 2M/inner track only
2.0nV/ √ Hz (typ.) keeps read data output jitter to a
minimum
39dB and 45dB
is boosted by 3dB, making it possible to minimize
peak shift in inner tracks.
modes: 1M, 1.6M/2M
modes: 1M/1.6M/2M. The inner/outer track current
ratio is fixed for each mode, but can be
customized.
and remains constant. In addition, the current rise
time Tr and fall time Tf are determined according
to the head inductance and current. (Refer to
page 20.)
be customized between 2kΩ and 15kΩ in 1kΩ
steps. A damping resistor can not be connected to
this IC, however.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Read/Write Amplifier (with Built-in Filters) for FDDs
– 1 –
Applications
Structure
Absolute Maximum Ratings (Ta = 25°C)
• Supply voltage
• Operating temperature
• Storage temperature
• Allowable power dissipation
• Digital signal input pin Input voltage
• Power ON output voltage applied V
• Erase output voltage applied
• Write head voltage applied
• Write current
• Erase current
• Power on output current
Operating Conditions
Three-mode FDDs
Bipolar silicon monolithic IC
Supply voltage
CXA3010Q
32 pin QFP (Plastic)
V
Topr
Tstg
P
I
I
W
E
CC
D
–0.5 to V
–65 to +150
–20 to +75
V
4.4 to 6.0
CC
CC
500
7.0
15
20
30
7
+ 0.3
+ 0.3
E94Y32A52-ST
CC
+ 0.3 V
mAo-p
mW
mA
mA
°C
°C
V
V
V
V
V

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CXA3010 Summary of contents

Page 1

... Read/Write Amplifier (with Built-in Filters) for FDDs For the availability of this product, please contact the sales office. Description The CXA3010Q is a monolithic IC designed for use with three-mode Floppy Disk Drives, and contains a read circuit (with a four-mode filter system), a write circuit, an erase circuit, and a supply voltage detection circuit, all on a single chip ...

Page 2

... DRIVER D.GND 29 ERASE ERA0 30 DRIVER POWER ERA1 31 MONITOR XPS FILTER DIFF + LPF PREAMP (BPF) TIME CONTROL DOMAIN LOGIC FILTER – 2 – CXA3010Q FILTER 15 OUTA FILTER 14 OUTB A.GND 13 COMP MMVA 12 FCSET XHD ...

Page 3

... High. Filter inner track/outer track mode control. Inner track mode is selected when the logical voltage is Low. Filter, time domain filter and write current 1M/2M mode control. 2M mode is selected when the logical voltage is Low. CXA3010Q ...

Page 4

... CC frequency. Time domain filter 1st monostable multivibrator pulse width setting. Connect the 1st monostable multivibrator pulse width setting resistor R between this pin and A A.GND. Analog system GND connection. Filter differential outputs. Not connected. Preamplifier differential outputs. CXA3010Q ...

Page 5

... Erase current setting resistor connection. Connect the erase current setting resistor R between this pin and V to set the erase CC current. Digital system GND connection. Erase current connection for the HEAD0 system. Erase current connection for the HEAD1 system. CXA3010Q to set the to set the E ...

Page 6

... Pin Pin Symbol No. voltage 32 32 XPS — Equivalent circuit V CC 162k 1k 2.1V A.GND – 6 – Description Power saving signal input. When the logical voltage is Low, the power saving mode. In power saving mode, only the power supply on/off detector operates. CXA3010Q ...

Page 7

... OTF = Low, XHG = Low G /G (100kHz) = –3dB Band Width 1 = 400Hz to 1MHz – 7 – CXA3010Q (Ta = 25°C, V Measure- Min. Typ. Max. ment Point — — — — 0.95 1.9 (Ta = 25°C) Measure- Min. Typ. Max. ment Point — ...

Page 8

... C = 20pF 2kΩ 20pF 0.25mVp 3.5mVp-p XHG = Low, XHD = Low OTF = Low 125kHz, 2M/ inner track mode Refer to Fig. 1 – 8 – CXA3010Q (Ta = 25°C, V Measure- Min. Typ. Max. ment Point A, F 2.25 2.5 2. 1.13 1.25 1.38 A 260 400 540 A — — 0 ...

Page 9

... ETM1 = ( –1) 2.5µs When X360 = Low and XHD = High, or X360 = X and XHD = Low ETM1 –1) 1.25µs • 1st monostable multivibrator pulse width = T • Peak shift 1 T – 100 [%] 100 [%] 100 [%] 2 – 9 – CXA3010Q 1. ...

Page 10

... B, C –24.7 –22 163.8 182 4.3 6 –7.6 –7 –24.7 –22 288.0 320 4.4 6 –7.6 –7 –25.0 –23.1 CXA3010Q = 5V) CC 187.0 kHz 7.8 dB –6.6 dB –21.2 dB 200.2 kHz 7.8 dB –6.6 dB –21.2 dB 352.0 kHz 7.9 dB –6.6 dB –21.5 dB ...

Page 11

... OTF = Low (2M/inner track) Refer to Fig Refer to Fig 1/3f 04 Refer to Fig Gn1 Gn2 1/3fon fon 3fon – 11 – CXA3010Q Measure- Min. Typ. Max. Unit ment Point B, C 310.5 345.0 379.5 kHz D, E 5.9 7.8 9 –8.5 –8.0 –7.5 ...

Page 12

... W 2.72mAo – 1) 100 [%] E 9.08mA Measure- Conditions ment circuit – 12 – CXA3010Q (Ta = 25°C, V Measure- Min. Typ. Max. ment Point J', K' –20 — +20 L –7 — –1 — — ...

Page 13

... SW5 SW4 FILTER OUTA FILTER OUTB A.GND CXA3010Q MMVA FCSET SW1 SW2 – 13 – 3300p 17 12k 16 NC 3300p 27k 11 3.26k XHD 9 SW3 CXA3010Q F External Comparator ...

Page 14

... Note) Unless otherwise specified, switches are assumed to be set to "a". SW1 VSW CXA3010Q – 14 – FILTER 15 OUTA FILTER 14 OUTB A.GND 13 MMVA 12 27k FCSET 11 3.26k XHD CXA3010Q 5V G ...

Page 15

... Butterworth 2M/outer track: Butterworth 2M/inner track: Chebyshev 1dB ripple for 1M/outer track mode is shown below filter setting resistance [kΩ] F – 15 – is set by external resistor used as a reference (1.00). O1 Filter output A 15 Filter output the LPF. The LPF O fo ratio 1.00 1.07 1.88 2.03 1.88 2.03 CXA3010Q ...

Page 16

... Observe the following point when mounting this device. • The ground should be as large as possible. connected between Pin 25 and [kΩ] W can be changed for each mode by switching Pin 4. W between Pin 28 and V E [kΩ] – 16 – RA [kΩ] , between Pin 26 and CXA3010Q , CC ...

Page 17

... POWER LOGIC MONITOR – 17 – FILTER FILTER 15 OUTA DIFF + LPF (BPF) FILTER 14 OUTB A.GND 13 COMP MMVA 12 FCSET 11 TIME V CC DOMAIN 10 FILTER XHD However, if connected and set XHD (Pin 9) high or low to CC CXA3010Q ...

Page 18

... In the comprehensive characteristics, the relationship between the peak frequencies fo and follows, depending on the differences of the LPF type: Butterworth characteristics Chebyshev (1dB ripple characteristics) B.P 0.577 (Differential characteristics 1.6M, 2M/inner track Tertiary Chebyshev fc 4 fo4 fcn = 1.28fon ( fc4 = 1.12fo4 – 18 – CXA3010Q L.P.F (High-band noise cutoff) 1dBRp (Comprehensive characteristics) ...

Page 19

... The boxed ratio indicates the setting for the CXA3010Q. Write Current Setting Method Assuming the outer track as 1.00, the write current ratio is fixed within the IC for each mode. The write current for the outer track is set in each mode by the resistors connected to Pins 25, 26, and 27. The current ratio for the inner track in each mode can be selected according to the following table ...

Page 20

... When the potential difference VA in the head this case, because VA does not reach clamping level, the rise time becomes the rise time of I circuits within the IC. Current rise time Tr = 1.3µs – 1.8V) or more CC [µs] L: [µH], IE: [mA [V] CC – 1.8V) or less CC – 20 – CXA3010Q connected to Pin 28. E –1.8V the E ...

Page 21

... As when the erase current is turned on [mA] E Circuits within IC D1 (positive protective diode (rise/fall time: 1.3µs) E (negative protective diode) Fig. 3. Erase equivalent circuit – 21 – CXA3010Q in the circuits E For ERA1 High = approx. 2.25V Low = 0V ...

Page 22

... Voltage gain 0 Phase 45 90 135 180 10M 1M/inner track Phase Voltage gain = 5V 25° 3.26k F 40k 100k 400k 1M Frequency [Hz] 1.6M, 2M/inner track Voltage gain Phase = 5V 25° 3.26k F 40k 100k 400k 1M Frequency [Hz] CXA3010Q 180 90 0 –90 –180 4M 180 90 0 –90 –180 4M ...

Page 23

... Normalized filter peak frequency Nf 0 1.05 1. 25°C Nf 3.26k CC 0.95 4 Normalized 1st monostable multivibrator pulse width NTA vs. Supply voltage Vcc 1.05 1. 25°C 27k NTA = T 0.95 4 – 23 – CXA3010Q 11 R 3.26k 5V 5.0 6.0 Vcc – Supply voltage [V] vs. 0 Supply voltage Vcc 5V ...

Page 24

... 25° 1.3 1 0.95 4 vs. Normalized erase current NI E 1.05 1. 25° 1.3k CC 0.95 4 – 24 – CXA3010Q Supply voltage Vcc / 5V 5.0 6.0 Vcc – Supply voltage [V] Supply voltage Vcc 5V 1.3 1.3 1 ...

Page 25

... Ta – Ambient temperature [°C] vs. R 1st monostable multivibrator pulse width 10 5 6.2 F 1.0 0.5 0 – 25 – CXA3010Q vs 25° 88R + 124 44R + 100 R ...

Page 26

... SONY CODE EIAJ CODE JEDEC CODE 32PIN QFP (PLASTIC) 9.0 ± 0.2 + 0.3 7.0 – 0 0.15 0.3 – 0.1 0.24 M PACKAGE MATERIAL LEAD TREATMENT QFP-32P-L01 QFP032-P-0707 LEAD MATERIAL PACKAGE MASS – 26 – CXA3010Q 0.1 + 0.35 1.5 – 0.15 + 0.2 0.1 – 0.1 + 0.1 0.127 – 0.05 0° to 10° EPOXY RESIN SOLDER PLATING 42 ALLOY 0.2g ...

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