EM25LV010-25KGBS EMC [ELAN Microelectronics Corp], EM25LV010-25KGBS Datasheet - Page 11

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EM25LV010-25KGBS

Manufacturer Part Number
EM25LV010-25KGBS
Description
1 Megabit (128K x 8) Serial Flash Memory
Manufacturer
EMC [ELAN Microelectronics Corp]
Datasheet
Instructions
This specification is subject to change without further notice. (11.08.2004 V1.0)
WREN
WRDI
RDSR
WRSR
READ
FAST READ
PP
BE
CE
DP
RES
RDID
Instruction
All instructions, addresses, and data are shifted in and out of the device with the most
significant bit shifted first.
Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S#) is driven Low. Then, the one-byte instruction code must be shifted in to the device with
the most significant bit entered first on Serial Data Input (D), and each bit being latched on the
rising edges of Serial Clock (C). The instruction set is listed in Table 7 below.
Depending on the instruction, the one-byte instruction code is followed by address bytes or
data bytes, or both, or none at all. Chip Select (S#) must be driven High after the last bit of
the instruction sequence has been shifted in.
At the end of a Page Program (PP), Block Erase (BE), Chip Erase (CE), or Write Status
Register (WRSR) instruction, Chip Select (S#) must be driven High exactly at a byte boundary.
Otherwise the instruction will be rejected and not executed. That is, Chip Select (S#) must be
driven High when the number of clock pulses after Chip Select (S#) being driven Low, is an
exact multiple of eight. All attempts to access the memory array during a Write Status
Register cycle, Program cycle, or Erase cycle are ignored, and the internal Write Status
Register cycle, Program cycle, or Erase cycle will continue ineffectively.
Write Enable
Write Disable
Read Status Register
Write Status Register
Read Data Bytes
Read Data Bytes at Higher Speed
Page Program
Block Erase
Chip Erase
Deep Power-down
Release from Deep Power-down, and
Read Device ID
Release from Deep Power-down
Read Manufacturer/Device ID
Description
1 Megabit (128K x 8) Serial Flash Memory
Table 7: Instruction Set
One-byte Instruction Code
0000 0110
0000 0100
0000 0101
0000 0001
0000 0010
1101 1000
1011 1001
1001 0000
0000 0011
0000 1011
1010 1011
1100 0111
SPECIFICATION
Address
Bytes
0
0
0
0
3
3
3
0
0
0
0
0
3
EM25LV010
Dummy
Bytes
0
0
0
0
0
1
0
0
0
0
3
0
3
Page 11 of 30
0
0
1 to ∞
1
1 to ∞
1 to 256
0
0
0
1 to ∞
0
1 to ∞
1 to ∞
Bytes
Data

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