IRF7523D1PBF

Manufacturer Part NumberIRF7523D1PBF
DescriptionMICRO8/30V FETKY - MOSFET AND SCHOTTKY DIODE IN A MICRO 8 PACKAGE
ManufacturerInternational Rectifier Corp.
IRF7523D1PBF datasheet
 


Specifications of IRF7523D1PBF

Lead_time84Pack_quantity80
AnalogIRFIRF7523D1Comm_code85412900
EccnEAR99  
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400
V
= 0V ,
f = 1M H z
G S
C
= C
+ C
, C
iss
gs
gd
C
= C
rss
gd
C
= C
+ C
oss
ds
gd
300
C
is s
C
o s s
200
C
rs s
100
0
1
10
V
, D rain-to-S ource V oltage (V )
D S
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Power Mosfet Characteristics
20
I
D
S H O R TE D
ds
16
12
8
4
0
A
100
0
Fig 10. Typical Gate Charge Vs.
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
IRF7523D1
= 1.7A
V
= 24V
D S
V
= 15V
D S
FO R TE S T C IR C U IT
S E E FIG U R E 9
2
4
6
8
10
Q , Total G ate C harge (nC )
G
Gate-to-Source Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
J
DM
thJC
C
1
10
A
12
100
5