SST39VF800A704IEKE Silicon Storage Technology, Inc, SST39VF800A704IEKE Datasheet

SST39VF800A704IEKE

Manufacturer Part Number

SST39VF800A704IEKE

Description

TSOP48

Manufacturer

Silicon Storage Technology, Inc

Datasheet

1.SST39VF800A704IEKE.pdf (30 pages)

Specifications of SST39VF800A704IEKE

Date_code

05+

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FEATURES:

• Organized as 128K x16 / 256K x16 / 512K x16

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Sector-Erase Capability

• Block-Erase Capability

• Fast Read Access Time

• Latched Address and Data

PRODUCT DESCRIPTION

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices are 128K x16 / 256K x16 / 512K x16 CMOS

Multi-Purpose Flash (MPF) manufactured with SST’s pro-

prietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST39LF200A/400A/800A

write (Program or Erase) with a 3.0-3.6V power supply. The

SST39VF200A/400A/800A write (Program or Erase) with a

2.7-3.6V power supply. These devices conform to JEDEC

standard pinouts for x16 memories.

Featuring

SST39LF200A/400A/800A

800A devices provide a typical Word-Program time of 14

µsec. The devices use Toggle Bit or Data# Polling to detect

the completion of the Program or Erase operation. To pro-

tect against inadvertent write, they have on-chip hardware

and software data protection schemes. Designed, manu-

factured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed endurance of

10,000 cycles. Data retention is rated at greater than 100

years.

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices are suited for applications that require conve-

nient and economical updating of program, configuration,

or data memory. For all system applications, they signifi-

S71117-04-000 2/02

– 3.0-3.6V for SST39LF200A/400A/800A

– 2.7-3.6V for SST39VF200A/400A/800A

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 20 mA (typical)

– Standby Current: 3 µA (typical)

– Uniform 2 KWord sectors

– Uniform 32 KWord blocks

– 45 and 55 ns for SST39LF200A/400A

– 55 ns for SST39LF800A

– 70 and 90 ns for SST39VF200A/400A/800A

2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

high

SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories

performance

SST39VF200A / SST39VF400A / SST39VF800A

SST39LF200A / SST39LF400A / SST39LF800A

360

and

Word-Program,

SST39VF200A/400A/

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Word-Program

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard

• Packages Available

cantly improve performance and reliability, while lowering

power consumption. They inherently use less energy dur-

ing Erase and Program than alternative flash technologies.

When programming a flash device, the total energy con-

sumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash technologies. These devices also improve flexibility

while lowering the cost for program, data, and configuration

storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet surface mount requirements, the SST39LF200A/

400A/800A and SST39VF200A/400A/800A are offered in

both 48-lead TSOP packages and 48-ball TFBGA pack-

ages. See Figures 1 and 2 for pinouts.

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time:

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

2 seconds (typical) for SST39LF/VF200A

4 seconds (typical) for SST39LF/VF400A

8 seconds (typical) for SST39LF/VF800A

Multi-Purpose Flash and MPF are trademarks of Silicon Storage Technology, Inc.

Generation

These specifications are subject to change without notice.

Data Sheet

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