SST29LE512-150-4C-NH Silicon Storage Technology, Inc, SST29LE512-150-4C-NH Datasheet

SST29LE512-150-4C-NH

Manufacturer Part Number

SST29LE512-150-4C-NH

Description

Manufacturer

Silicon Storage Technology, Inc

Datasheets

1.SST29LE512.pdf (26 pages)

2.SST29EE512-90-4C-NH.pdf (26 pages)

Specifications of SST29LE512-150-4C-NH

Case

PLCC-32

Date_code

1999+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST29LE512-150-4C-NH

Manufacturer:

SST

Quantity:

3 400

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST29LE512-150-4C-NH

Manufacturer:

SST

Quantity:

3 400

Company:

Meier Automation Equipment Co., Limited

Part Number:

SST29LE512-150-4C-NHE

Manufacturer:

SST

Quantity:

20 000

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FEATURES:

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Fast Page-Write Operation

• Fast Read Access Time

PRODUCT DESCRIPTION

The SST29LE/VE512 are 64K x8 CMOS, Page-Write

EEPROMs manufactured with SST’s proprietary, high-

performance CMOS SuperFlash technology. The split-

gate cell design and thick-oxide tunneling injector attain

better reliability and manufacturability compared with

alternate approaches. The SST29LE/VE512 write with a

single power supply. Internal Erase/Program is transpar-

ent to the user. The SST29LE/VE512 conform to JEDEC

standard pinouts for byte-wide memories.

Featuring high performance Page-Write, the SST29LE/

VE512 provide a typical Byte-Write time of 39 µsec. The

entire memory, i.e., 64 Kbyte, can be written page-by-

page in as little as 2.5 seconds, when using interface fea-

tures such as Toggle Bit or Data# Polling to indicate the

completion of a Write cycle. To protect against inadvert-

ent write, the SST29LE/VE512 have on-chip hardware

and Software Data Protection schemes. Designed, man-

ufactured, and tested for a wide spectrum of applications,

the SST29LE/VE512 are offered with a guaranteed

Page-Write endurance of 10,000 cycles. Data retention is

rated at greater than 100 years.

S71060(01)-00-EOL

– 3.0-3.6V for SST29LE512

– 2.7-3.6V for SST29VE512

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 10 mA (typical) for 3.0/2.7V

– Standby Current: 10 µA (typical)

– 128 Bytes per Page, 512 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 2.5 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

– 4.5-5.5V operation: 70 ns

– 3.0-3.6V operation: 150 ns

– 2.7-3.6V operation: 200 ns

512 Kbit (64K x8) Page-Write EEPROM

SST29LE / VE512512Kb (x8) Page-Write, Small-Sector flash memories

9/05

SST29LE512 / SST29VE512

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Latched Address and Data

• Automatic Write Timing

• End of Write Detection

• Hardware and Software Data Protection

• Product Identification can be accessed via

• TTL I/O Compatibility

• JEDEC Standard

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

The SST29LE/VE512 are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applica-

tions, the SST29LE/VE512 significantly improve perfor-

mance and reliability, while lowering power consumption.

The SST29LE/VE512 improve flexibility while lowering

the cost for program, data, and configuration storage

applications.

To meet high density, surface mount requirements, the

SST29LE/VE512 are offered in 32-lead PLCC and 32-lead

TSOP packages. See Figures 1 and 2 for pinouts.

Device Operation

The SST Page-Write EEPROM offers in-circuit electrical

write capability. The SST29LE/VE512 do not require sepa-

rate Erase and Program operations. The internally timed

Write cycle executes both erase and program transparently

to the user. The SST29LE/VE512 have industry standard

optional Software Data Protection, which SST recom-

mends always to be enabled. The SST29LE/VE512 are

compatible with industry standard EEPROM pinouts and

functionality.

– Internal V

– Toggle Bit

– Data# Polling

Software Operation

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 20mm)

Generation

These specifications are subject to change without notice.

SSF is a trademark of Silicon Storage Technology, Inc.

EOL Product Data Sheet

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