K4T1G044QC SAMSUNG [Samsung semiconductor], K4T1G044QC Datasheet - Page 12

• Manufacturer Part Number: K4T1G044QC
• Description: 1Gb C-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

7.6 Differential input AC logic Level
Note :
1. V
and V
2. The typical value of V
V
7.7 Differential AC output parameters
Note :
1. The typical value of V
V
8.0 ODT DC electrical characteristics
Note1: Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply V
(ac), V
Measurement Definition for VM: Measure voltage (V
K4T1G044QC
K4T1G084QC
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Deviation of VM with respect to VDDQ/2
IX
OX
(AC) indicates the voltage at which differential input signals must cross.
ID
(AC) indicates the voltage at which differential output signals must cross.
Symbol
Symbol
V
V
V
(AC) specifies the input differential voltage |V
CP
OX
IL
ID(AC)
IX(AC)
(AC)
(ac), and VDDQ values defined in SSTL_18
is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
AC differential cross point voltage
IX
OX
(AC) is expected to be about 0.5 * VDDQ of the transmitting device and V
(AC) is expected to be about 0.5 * VDDQ of the transmitting device and V
AC differential cross point voltage
PARAMETER/CONDITION
AC differential input voltage
V
V
CP
TR
delta VM =
Parameter
Parameter
Rtt(eff) =
IH
(ac) and V
TR
M
I(
-V
V
) at test pin (midpoint) with no load.
< Differential signal levels >
V
2 x Vm
VDDQ
IH
CP
IH
(ac)
IL
(ac)
| required for switching, where V
(ac) to test pin separately, then measure current I(V
) - I(
-
V
IL
V
- 1
(ac)
IL
V
V
(ac)
DDQ
SSQ
V
ID
x 100%
12 of 26
)
0.5 * VDDQ - 0.175
0.5 * VDDQ - 0.125
Min.
Min.
0.5
SYMBOL
delta VM
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
TR
is the true input signal (such as CK, DQS, LDQS or UDQS)
V
IX or
IX
OX
Crossing point
(AC) is expected to track variations in VDDQ .
V
(AC) is expected to track variations in VDDQ .
MIN
120
60
40
- 6
0.5 * VDDQ + 0.175
OX
0.5 * VDDQ + 0.125
V
DDQ
IH
Max.
Max.
NOM
150
(ac)) and I( V
75
50
IH
+ 0.6
(AC) - V
DDR2 SDRAM
MAX
Rev. 1.1 June 2007
180
+ 6
90
60
IL
(AC).
IL
(ac)) respectively. V
UNITS
Units
Units
ohm
ohm
ohm
V
V
V
%
NOTES
Notes
Note
1
1
1
1
1
2
1
IH