K4T1G044QE SAMSUNG [Samsung semiconductor], K4T1G044QE Datasheet - Page 31

• Manufacturer Part Number: K4T1G044QE
• Description: 1Gb E-die DDR2 SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T1G044QE
K4T1G084QE
K4T1G164QE
V
V
V
V
V
V
Hold Slew Rate
REF
IL
IL
DDQ
IH
IH
Rising Signal
(DC)max
(AC)max
(AC)min
(DC)min
(DC)
DQS
DQS
Figure 11. IIIustration of nominal slew rate for tDH (differential DQS, DQS)
V
SS
dc to V
dc to V
region
region
=
V
REF
REF
REF
(DC) - V
datasheet
ΔTR
slew rate
tDS
nominal
IL
(DC)max
tDH
- 31 -
ΔTR
Hold Slew Rate
Falling Signal
nominal
slew rate
tDS
=
V
IH
(DC)min - V
tDH
ΔTF
ΔTF
REF
(DC)
DDR2 SDRAM
Rev. 1.11