K4T1G044QE SAMSUNG [Samsung semiconductor], K4T1G044QE Datasheet - Page 33

• Manufacturer Part Number: K4T1G044QE
• Description: 1Gb E-die DDR2 SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T1G044QE
K4T1G084QE
K4T1G164QE
V
V
V
V
V
V
REF
IL
IL
DDQ
IH
IH
Hold Slew Rate tangent line [ V
(DC)max
(AC)max
Rising Signal
(AC)min
(DC)min
(DC)
DQS
DQS
V
SS
Figure 13. IIIustration of tangent line for tDH (differential DQS, DQS)
=
dc to V
dc to V
region
region
REF
REF
datasheet
tDS
tangent
REF
line
ΔTR
(DC) - V
Hold Slew Rate
Falling Signal
tDH
IL
- 33 -
ΔTR
(DC)max ]
=
nominal
tangent line [ V
line
tDS
tangent
line
IH
tDH
(DC)min - V
ΔTF
ΔTF
nominal
line
REF
(DC) ]
DDR2 SDRAM
Rev. 1.11