K4T51043QE SAMSUNG [Samsung semiconductor], K4T51043QE Datasheet - Page 27

• Manufacturer Part Number: K4T51043QE
• Description: 512Mb E-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QE
K4T51083QE
K4T51163QE
DQS
Note1
Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min.
V
V
V
V
Setup Slew Rate
V
V
IL(dc)
IL(ac)
Falling Signal
REF(dc)
DDQ
IH(dc)
IH(ac)
Figure 6 - IIIustration of nominal slew rate for tDS (single-ended DQS)
max
max
V
V
V
V
V
V
V
min
min
V
DDQ
IH(ac)
IH(dc)
REF(dc)
IL(dc)
IL(ac)
SS
SS
max
max
min
min
VREF to ac
region
=
V
∆TF
REF(dc)
∆TF
- Vil(ac)max
nominal slew
tDS
rate
27 of 45
tDH
Setup Slew Rate
Rising Signal
∆TR
tDS
nominal
slew rate
=
Vih(ac)min - V
tDH
VREF to ac
∆TR
region
REF(dc)
DDR2 SDRAM
Rev. 1.8 July 2007