TA4011AFE_07 TOSHIBA [Toshiba Semiconductor], TA4011AFE_07 Datasheet
TA4011AFE_07
Manufacturer Part Number
TA4011AFE_07
Description
UHF Wide Band Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TA4011AFE_07.pdf
(4 pages)
UHF Wide Band Amplifier Applications
Features
•
•
•
Absolute Maximum Ratings
Marking
Low current: I
Wide band: f = 2.4 GHz (3dB down)
Operating supply voltage: V
Supply voltage 1
Supply voltage 2
Total power dissipation
Operating temperature
Storage temperature
Note:
Note 1: When V
Note 2: When mounted on the glass epoxy of 2.5 cm
5
1
OUT
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
CC
U 3
2
GND
CC
COLLECTOR
CC
= 3.5 mA
4
3
is operated at less than 1/4 duty cycle
IN
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
(Note 1)
(Note 2)
CC
= 1.5~3 V
(Ta = 25°C)
TA4011AFE
Symbol
V
V
T
T
P
CC
CC
opr
stg
D
1
2
−55~150
−40~85
Rating
2
300
3.2
× 1.6 t
4
1
Unit
mW
°C
°C
V
V
Weight: 0.003 g (typ.)
TA4011AFE
2007-11-01
Related parts for TA4011AFE_07
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
TA4011AFE_07 Summary of contents
Page 1
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic UHF Wide Band Amplifier Applications Features • Low current 3 • Wide band 2.4 GHz (3dB down) • Operating supply voltage Absolute Maximum Ratings Characteristics ...
Page 2
Electrical Characteristics Characteristics Circuit current Band width Insertion gain Noise figure Isolation Input return loss Output return loss Output power gain compression BW is the frequency of 3dB down from ⎪S21⎪ Note3: Caution This device is sensitive ...
Page 3
Package Dimensions Weight: 0.003 g (typ.) 3 TA4011AFE 2007-11-01 ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...