HYB5117400BJ-50- SIEMENS [Siemens Semiconductor Group], HYB5117400BJ-50- Datasheet

HYB5117400BJ-50-

Manufacturer Part Number

HYB5117400BJ-50-

Description

4M x 4-Bit Dynamic RAM

Manufacturer

SIEMENS [Siemens Semiconductor Group]

Datasheet

1.HYB5117400BJ-50-.pdf (26 pages)

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4M x 4-Bit Dynamic RAM

Advanced Information

Semiconductor Group

4 194 304 words by 4-bit organization

0 to 70 °C operating temperature

Performance:

Single + 5 V ( 10 %) supply

Low power dissipation

max. 660 active mW (-50 version)

max. 605 active mW (-60 version)

max. 550 active mW (-70 version)

11 mW standby (TTL)

5.5. mW standby (MOS)

Output unlatched at cycle end allows two-dimensional chip selection

Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,

self refresh and test mode

Fast page mode capability

All inputs, outputs and clocks fully TTL-compatible

2048 refresh cycles / 32 ms

Plastic Package:

t RAC

t CAC

t AA

t RC

t PC

RAS access time

CAS access time

Access time from address

Read/Write cycle time

Fast page mode cycle time

P-SOJ-26/24 300 mil

P TSOPII-26/24 300 mil

-50

110

-60

HYB5117400BT -50/-60/-70

HYB5117400BJ -50/-60/-70

130

-70

1.96

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