HYB514256B-50 SIEMENS [Siemens Semiconductor Group], HYB514256B-50 Datasheet

no-image

HYB514256B-50

Manufacturer Part Number
HYB514256B-50
Description
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
Ordering Information
Type
HYB 514256B-50
HYB 514256B-60
HYB 514256B-70
HYB 514256BJ-50
HYB 514256BJ-60
HYB 514256BJ-70
HYB 514256BL-50
HYB 514256BL-60
HYB 514256BL-70
HYB 514256BJL-50
HYB 514256BJL-60
HYB 514256BJL-70
256 K
Low Power 256 K
Advanced Information
Semiconductor Group
262 144 words by 4-bit organization
Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
45 ns (-70 version)
Low power dissipation
max. 495 mW active (-50 version)
max. 440 mW active (-60 version)
max. 385 mW active (-70 version)
max. 5.5 mW standby
max. 1.1 mW standby for L-version
4-Bit Dynamic RAM
Ordering Code
Q67100-Q1044
Q67100-Q530
Q67100-Q433
Q67100-Q1054
Q67100-Q536
Q67100-Q537
on request
Q67100-Q542
Q67100-Q543
on request
Q67100-Q608
Q67100-Q607
4-Bit Dynamic RAM
Package
P-DIP-20-2
P-DIP-20-2
P-DIP-20-2
P-SOJ-26/20-1
P-SOJ-26/20-1
P-SOJ-26/20-1
P-DIP-20-2
P-DIP-20-2
P-DIP-20-2
P-SOJ-26/20-1
P-SOJ-26/20-1
P-SOJ-26/20-1
55
Single + 5 V ( 10 %) supply with a built-in
generator
Output unlatched at cycle end allows two-
dimensional chip selection
Read-modify-write, CAS-before-RAS
refresh, RAS-only refresh, hidden-refresh
and fast page mode capability
All inputs, outputs and clocks
TTL-compatible
512 refresh cycles/8 ms
512 refresh cycles/64 ms
for L-version only
Plastic Packages:
HYB 514256BL/BJL-50/-60/-70
HYB 514256B/BJ-50/-60/-70
Description
DRAM (access time 50ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
P-DIP-20-2,
P-SOJ-26/20-1
01.95
V
BB

Related parts for HYB514256B-50

HYB514256B-50 Summary of contents

Page 1

... P-SOJ-26/20-1 DRAM (access time 60 ns) P-SOJ-26/20-1 DRAM (access time 70 ns) P-DIP-20-2 DRAM (access time 50 ns) P-DIP-20-2 DRAM (access time 60 ns) P-DIP-20-2 DRAM (access time 70 ns) P-SOJ-26/20-1 DRAM (access time 50 ns) P-SOJ-26/20-1 DRAM (access time 60 ns) P-SOJ-26/20-1 DRAM (access time 70 ns ...

Page 2

... Schottky TTL. These HYB 514256BL/BJL are specially selected for battery backup applications. Pin Definitions and Functions Pin No. Function A0-A8 Address Inputs RAS Row Address Strobe OE Output Enable I/O1-I/O4 Data Input/Output CAS Column Address Strobe WE Read/Write Input V Power Supply (+ Ground ( N.C. No Connection Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 56 256 K 4-DRAM ...

Page 3

... Pin Configuration (top view) P-SOJ-26/20-1 Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 P-DIP-20-2 57 256 K 4-DRAM ...

Page 4

... Block Diagram Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 58 256 K 4-DRAM ...

Page 5

... RC 59 256 K Limit Values Unit Test Condition min. max. 1) 2.4 6 – 1.0 0 2.4 – – 0 – – – – – – – – – – 4-DRAM ...

Page 6

... HYB 514256B/BL/BJ/BJL-50/-60/- Symbol I CC4 I CC5 I CC6 min.) I CC7 60 256 K Limit Values Unit Test Condition min. max. – – – – – 200 A – – – – 300 A 4-DRAM ...

Page 7

... Unit ...

Page 8

... Unit ...

Page 9

... 256 K Limit Values -60 -70 min. max. min. max. 30 – 40 – – 15 – – 10 – – 0 – 0 – 0 – 20 – 20 – 20 – 20 – Limit Values min. max. – 5 – 7 – 7 4-DRAM Unit Unit ...

Page 10

... RAC (max.) limit, then access time is controlled by t RCD (max.) can be met. t RAC (max.) limit, then access time is controlled by t RAD = 5ns 256 K 4-DRAM (min.), t (min.) and RWD CWD CWD (max.) is specified as a reference RCD (max.) is specified as a reference ...

Page 11

... RAS t CSH t t RSH RCD t CAS t RAD t RAL t CAH t ASC Column Address t t RAH RCS OEA t DZC t DZO t CAC t CLZ RAC 65 256 CRP t ASR Row Address t RCH t RRH t CDD t ODD t OFF t OEZ Valid Data Out Hi Z 4-DRAM ...

Page 12

... Write Cycle (Early Write) Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/- RAS t CSH t t RCD RSH t CAS t RAD t RAL t CAH t ASC Column Address t CWL t RAH t WCS WCH t RWL Valid Data 256 K 4-DRAM CRP t ASR . Row Address ...

Page 13

... Write Cycle (OE Controlled Write) Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/- RAS t CSH t t RCD RSH t CAS t RAD t RAL t CAH t ASC Column Address t CWL t RWL OEH t ODD DZO DZC t OEZ Valid Data t CLZ t OEA Hi-Z 67 256 K 4-DRAM CRP t ASR . Row Address Hi-Z ...

Page 14

... AWD t RAD CWD t RWD OEA RCS t DZO t DZC t CLZ t CAC Data Out t RAC 68 256 RSH t t CAS CRP t ASR Address t CWL t RWL OEH Valid Data in t ODD t OEZ “H” or “L” 4-DRAM Row ...

Page 15

... Fast Page Mode Read-Modify-Write Cycle Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 69 256 K 4-DRAM ...

Page 16

... OEA OEA t t DZC DZC t DZO t DZO t ODD t CAC t t CAC OFF t RAC t OEZ t t CLZ CLZ Valid Data Out 70 256 K 4-DRAM RHCP t RSH t CRP t CAS t CAH t t ASR ASC Column Row Address Address t RCH t RCS t t CPA RRH t AA ...

Page 17

... Address t t CWL CWL t WCS t WCS t t WCH WCH Valid Valid Data In Data In HI-Z 71 256 K 4-DRAM RSH t CAS t CRP t RAL t t ASR CAH t ASC Column Row Address Address t CWL t RWL t WCS t WCH ...

Page 18

... V IH RAS CAS ASR V IH A0- I/O1-I/O4 (Outputs “H” or “L” RAS-Only Refresh Cycle Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 t RAS t RAH Row Address HI-Z 72 256 CRP t RPC t ASR Row Address 4-DRAM ...

Page 19

... CAS OEZ CDD V IH I/O1-I/O4 (Inputs ODD V OH I/O1-I/O4 (Outputs OFF “H” or “L” CAS-Before-RAS Refresh Cycle Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 t RAS t CSR t CHR t WRP t WRH HI-Z 73 256 K 4-DRAM CRP t RPC ...

Page 20

... HYB 514256B/BL/BJ/BJL-50/-60/- RAS t RSH t RCD t WRP t ASC t CAH Column Address t RRH OEA t DZC t DZO t CAC t CLZ t RAC Valid Data Out 74 256 RAS t t CHR CRP t ASR t WRH t CDD t ODD t OFF t OEZ HI-Z 4-DRAM Row Address ...

Page 21

... Hidden Refresh Cycle (Early Write) Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/- RAS t t RCD RSH t ASC t CAH Column Address t WCS t WCH Valid Data HI-Z 75 256 K 4-DRAM RAS t t CHR CRP t ASR Row Address ...

Page 22

... RSH t CAS t RAL AA t CAC t OEA t CDD t ODD t OFF t OEZ Valid Data Out t RWL t CWL t WCH t DH Data In t CWL t t RWL AWD t CWD OEA OEH Data In t ODD t OEZ D.Out HI-Z 4-DRAM t ASR Row Address t RRH t RCH ...

Related keywords