HYB514400BJ-50- SIEMENS [Siemens Semiconductor Group], HYB514400BJ-50- Datasheet - Page 5

• Manufacturer Part Number: HYB514400BJ-50-
• Description: 1M x 4-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70 C
Storage temperature range.................................................................................... – 55 to + 150 C
Input/output voltage ....................................................................................................... – 1 to + 7 V
Power Supply voltage .................................................................................................... – 1 to + 7 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
DC Characteristics
T
Parameter
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DO is disabled, 0 <
Average
Standby
(RAS = CAS = WE =
Average
refresh cycles
Average
mode operation
Standby
(RAS = CAS = WE =
Average
CAS-before-RAS refresh mode
Semiconductor Group
A
= 0 to 70 C,
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
V
IN
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
< 7, all other input = 0 V)
supply current
supply current
supply current
supply current during RAS-only
supply current during fast page
supply current during
V
SS
I
= 0 V,
V
I
OUT
V
V
OUT
OUT
IH
CC
)
= 4.2 mA)
= – 5 mA)
– 0.2 V)
<
V
V
CC
CC
= 5 V
)
-50 version
-60 version
-50 version
-60 version
-50 version
-60 version
-50 version
-60 version
10 %,
t
T
= 5 ns
Symbol
V
V
V
V
I
I
I
I
I
I
I
I
5
I(L)
O(L)
CC1
CC2
CC3
CC4
CC5
CC6
IH
IL
OH
OL
min.
2.4
– 1.0
2.4
–
– 10
– 10
–
–
–
–
–
–
–
–
–
–
Limit Values
HYB 514400BJ-50/-60
max.
V
0.8
–
0.4
10
10
120
110
2
120
110
80
70
1
120
110
CC
+ 0.5 V
Unit Test
V
V
V
mA
mA
mA
mA
mA
mA
1M
A
A
Condition
1
1
1
1
1
1
2, 3, 4
2, 4
2, 3, 4
1
2, 4
1998-10-01
4 DRAM