HYB514405BJ-50 SIEMENS [Siemens Semiconductor Group], HYB514405BJ-50 Datasheet

HYB514405BJ-50

Manufacturer Part Number

HYB514405BJ-50

Description

1M x 4-Bit Dynamic RAM

Manufacturer

SIEMENS [Siemens Semiconductor Group]

Datasheet

1.HYB514405BJ-50.pdf (25 pages)

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1M x 4-Bit Dynamic RAM

(Hyper Page Mode (EDO) version)

Preliminary Information

•

Semiconductor Group

1 048 576 words by 4-bit organization

0 to 70 ˚C operating temperature

Hyper Page Mode - EDO

Performance:

Single + 5 V ( 10 %) supply

Low power dissipation

max. 660 mW active (-50 version)

max. 605 mW active (-60 version)

max. 550 mW active (-70 version)

Standby power dissipation:

11 mW max.standby (TTL)

5.5 mW max.standby (CMOS)

1.1 mW max.standby (CMOS) for Low Power Version

Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,

hidden refresh and test mode capability

All inputs and outputs TTL-compatible

1024 refresh cycles / 16 ms

1024 refresh cycles / 128 ms for Low Power Version

Plastic Packages: P-SOJ-26/20-5 with 300 mil width

RAC

CAC

HPC

RAS access time

CAS access time

Access time from address

Read/Write cycle time

Hyper page mode (EDO)

cycle time

-50

104

-60

HYB 514405BJ/BJL-50/-60/-70

124

-70

5.96

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