MGFS36E2527_07 MITSUBISHI [Mitsubishi Electric Semiconductor], MGFS36E2527_07 Datasheet

MGFS36E2527_07

Manufacturer Part Number

MGFS36E2527_07

Description

2.5-2.7GHz HBT HYBRID IC

Manufacturer

MITSUBISHI [Mitsubishi Electric Semiconductor]

Datasheet

1.MGFS36E2527_07.pdf (7 pages)

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Specifications are subject to change without notice.

DESCRIPTION

FEATURES

APPLICATION

FUNCTIONAL BLOCK DIAGRAM

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the

possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give

due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,

(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.

• InGaP HBT Device

• 6V Operation

• 27dBm Linear Output Power

• 33dB Linear Gain

• Integrated Output Power Detector

• Integrated 1-bit 19dB Step Attenuator

• 50ohms Matched

• Surface Mount Package

• RoHS Compliant Package

MGFS36E2527 is GaAs RF amplifier designed

for WiMAX CPE.

IEEE802.16-2004, IEEE802.16e-2005

Vcont

(0/3V)

Vcb

MITSUBISHI ELECTRIC CORP.

Vc1

Bias Circuit

(1/7)

Vc2

4.5

Outline Drawing

Vc3

(Lot No.)

Vref

MITSUBISHI SEMICONDUCTOR

2527

36E

2.5-2.7GHz HBT HYBRID IC

4.5

(X-ray Top View)

MGFS36E2527

September-2007

Pout

Po_det

Vc (Vcb)

Vc (Vc1)

Vc (Vc2)

Vc (Vc3)

Pout

Po_det

GND

Vref

Vcont

DIM IN mm

1.0

Related parts for MGFS36E2527_07

MGFS36E2527_07 Summary of contents

Page 1

Specifications are subject to change without notice. DESCRIPTION MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE. FEATURES • InGaP HBT Device • 6V Operation • 27dBm Linear Output Power • 33dB Linear Gain • Integrated Output Power Detector • ...

Page 2

Specifications are subject to change without notice. ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Parameter Vc1, Vc2 Collector Supply Voltage Vc3, Vcb Vref Reference Voltage Vcont ATT Control Voltage Ic1 Ic2 Operation Current Ic3 Pin Input Power - Duty Cycle Tc(op) ...

Page 3

Specifications are subject to change without notice. PERFORMANCE DATA WiMAX OFDM 64QAM signal input. Ta=25degC. Output Power vs. Input Power 30 Vc=6V Vref=2.85V Vcont= -20 -15 -10 Input Power (dBm) EVM vs. Output Power 6.0 Vc=6V ...

Page 4

Specifications are subject to change without notice. WiMAX OFDM 64QAM signal input. Output Power vs. Input Power 30 f =2.6GHz Vc=6V Vref=2.85V 25 Vcont= -20 -15 -10 Input Power (dBm) EVM vs. Output Power 6.0 f =2.6GHz ...

Page 5

Specifications are subject to change without notice. WiMAX OFDM 64QAM signal input. Ta=25degC. Output Power vs. Input Power 30 f =2.6GHz Vc=6V Vcont= -20 -15 -10 Input Power (dBm) EVM vs. Output Power 6.0 f =2.6GHz ...

Page 6

Specifications are subject to change without notice. APPLICATION CIRCUIT Input Supply Voltage 1uF PACKAGE OUTLINE 4.5 4.1 3.6 0.3 1.8 0.3 3.65 2.65 MITSUBISHI ELECTRIC CORP. Pin Vcb Vc1 Vc2 Po_det Vc3 1000pF ...

Page 7

Specifications are subject to change without notice. HANDLING PRECAUTION 1) Work desk, test equipment, soldering iron and worker should be grounded before mounting and testing. Please note that electric discharge of GaAs HBT is much more sensitive than that of ...

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