CM800HA-66H_03 MITSUBISHI [Mitsubishi Electric Semiconductor], CM800HA-66H_03 Datasheet
CM800HA-66H_03
Related parts for CM800HA-66H_03
CM800HA-66H_03 Summary of contents
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... 10. NUTS 10.65 48.8 61.5 18 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... Insulated Type 1-element in a pack NUTS 0. MOUNTING HOLES 5.2 INSULATED TYPE ...
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... 800A E die / dt = –1600A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied ) does not exceed T j MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 20 800 1600 (Note 1) 800 (Note 1) 1600 6900 – ...
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... 125 1200 1600 COLLECTOR-EMITTER VOLTAGE V E MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) V =10V 125 GATE-EMITTER VOLTAGE V GE COLLECTOR-EMITTER SATURATION ...
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... G MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE OF FREE-WHEEL DIODE ( TYPICAL ) 1650V 125 Inductive load V = 15V 3. ...