HAT2196C-EL-E RENESAS [Renesas Technology Corp], HAT2196C-EL-E Datasheet

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HAT2196C-EL-E

Manufacturer Part Number
HAT2196C-EL-E
Description
Silicon N Channel MOS FET Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet

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Part Number:
HAT2196C-EL-E
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Quantity:
11 560
HAT2196C
Silicon N Channel MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - Drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
Rev.5.00, Jun. 13, 2005, page 1 of 6
Low on-resistance
R
Low drive current.
High density mounting
2.5 V gate drive devices.
DS(on)
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
= 45 m typ. (at V
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
10 s, duty cycle
Item
GS
Indexband
= 4.5 V)
1%
6
5
4
1
2
3
I
D
(pulse)
Pch
Symbol
V
V
Tstg
Tch
I
DSS
GSS
I
DR
D
Note 2
Note1
G
6
2
D
D
3
D
4
D
S
–55 to +150
5
1
Ratings
±12
850
150
2.5
2.5
20
10
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
REJ03G1235-0500
Jun. 13, 2005
Unit
mW
(Ta = 25°C)
V
V
A
A
A
C
C
Rev.5.00

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HAT2196C-EL-E Summary of contents

Page 1

... HAT2196C Silicon N Channel MOS FET Power Switching Features Low on-resistance typ. ( 4.5 V) DS(on) GS Low drive current. High density mounting 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage ...

Page 2

... HAT2196C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...

Page 3

... HAT2196C Main Characteristics Power vs. Temperature Derating 1.6 Test condition. When using the glass epoxy board. (FR4 1.6 mm) 1.2 0.8 0 100 Ambient Temperature Ta (°C) Typical Output Characteristics 4 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage ...

Page 4

... HAT2196C Static Drain to Source on State Resistance vs. Temperature 100 2 4 − Case Temperature Dynamic Input Characteristics 0.8 1.6 0 Gate Charge Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Rev.5.00, Jun. 13, 2005, page 100 = 2 ...

Page 5

... HAT2196C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Vin 4.5 V Rev.5.00, Jun. 13, 2005, page Vout Monitor R L Vin V DD Vout = 10 V td(on) Waveform 90% 10% 10% 10% 90% 90% td(off ...

Page 6

... A-A Section Ordering Information Part Name HAT2196C-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00, Jun. 13, 2005, page Package Name MASS[Typ.] CMFPAK-6 / CMFPAK-6V 0.0065g c ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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