HAT2196C-EL-E RENESAS [Renesas Technology Corp], HAT2196C-EL-E Datasheet - Page 4

• Manufacturer Part Number: HAT2196C-EL-E
• Description: Silicon N Channel MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2196C
Rev.5.00, Jun. 13, 2005, page 4 of 6
100
Static Drain to Source on State Resistance
40
30
20
10
10
40
20
80
60
2
0
4
6
0
8
0
−25
Source to Drain Voltage
V
V
Case Temperature
Dynamic Input Characteristics
0
GS
GS
Reverse Drain Current vs.
Gate Charge
0.4
Source to Drain Voltage
0.8
= 2.5 V
= 4.5 V
5 V
25
vs. Temperature
0.8
1.6
50
I
V
V
D
DD
DD
= 2.5 A
I
D
= 20 V
= 20 V
75
V
1.2
= 0.5, 1.3, 2.5 A
2.4
10 V
10 V
Qg (nC)
GS
5 V
5 V
= 0, –5 V
Pulse Test
1.3 A
100 125 150
Tc (°C)
Pulse Test
V
1.6
3.2
SD
0.5 A
(V)
2.0
4.0
8
6
4
2
0
1000
100
100
300
100
0.1
10
30
10
10
1
3
1
1
0.01
0.1
0
Drain to Source Voltage
V
R
Forward Transfer Admittance vs.
GS
G
= 4.7 Ω, Ta = 25°C
0.03
= –10 V, V
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
Drain Current
0.3
t d(off)
0.1
Drain Current
DS
0.3
10
= 10 V
1
Tc = –25°C
25°C
I
I
D
D
1
V
Pulse Test
V
f = 1 MHz
DS
(A)
(A)
3
GS
V
75°C
DS
= 10 V
t d(on)
= 0
Coss
3
Ciss
t r
Crss
t f
(V)
10
10
20