HAT2196C-EL-E RENESAS [Renesas Technology Corp], HAT2196C-EL-E Datasheet - Page 3

• Manufacturer Part Number: HAT2196C-EL-E
• Description: Silicon N Channel MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2196C
Main Characteristics
Rev.5.00, Jun. 13, 2005, page 3 of 6
120
160
1.6
1.2
0.8
0.4
10
80
40
8
6
4
2
0
0
0
Drain to Source Saturation Voltage vs.
Power vs. Temperature Derating
Drain to Source Voltage
Gate to Source Voltage
2.5 V
Ambient
Typical Output Characteristics
4.5 V
Gate to Source Voltage
2
2
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
50
Temperature Ta (°C)
10 V
4
4
100
2.0 V
6
6
Pulse Test
Pulse Test
V
150
GS
I
D
V
1.8 V
V
= 2.5 A
8
DS
8
= 1.2 V
1.6 V
1.4 V
GS
1.3 A
0.5 A
(V)
(V)
200
10
10
0.001
1000
0.01
100
100
Static Drain to Source on State Resistance
0.1
10
10
0.001
10
8
6
4
2
1
0
0.1
Gate to Source Voltage
10 µs
Drain Source Voltage V
Maximum Safe Operation Area
Typical Transfer Characteristics
Operation in this
area is limited by
R
0.01
DS(on)
–25°C
1
Drain Current I
100 µs
vs. Drain Current
1
0.1
2
When using the FR4 board.
1 shot pulse, Ta = 25°C
Tc = 75°C
1
3
25°C
V
10
GS
D
V
Pulse Test
2.5 V
Pulse Test
= 4.5 V
DS
DS
V
(A)
GS
10
= 10 V
4
(V)
(V)
100
100
5