K6R1004C1D-JC10 SAMSUNG [Samsung semiconductor], K6R1004C1D-JC10 Datasheet
K6R1004C1D-JC10
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K6R1004C1D-JC10 Summary of contents
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... SAMSUNG branch office near your office, call or contact Headquarters. Previous Current 8ns 100mA 90mA 10ns 85mA 75mA - 1 - PRELIMINARY PRELIMINARY for AT&T CMOS SRAM Draft Data Remark May. 11. 2001 Preliminary June. 18. 2001 Preliminary September. 9. 2001 Preliminary December. 18. 2001 Final June. 19. 2002 Final July ...
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... K6R1004V1D 1Mb Async. Fast SRAM Ordering Information Org. Part Number K6R1004C1D-J(K)C(I) 10 256K x4 K6R1004V1D-J(K)C(I) 08/10 K6R1008C1D-J(K,T,U)C(I) 10 128K x8 K6R1008V1D-J(K,T,U)C(I) 08/10 K6R1016C1D-J(K,T,U,E)C(I) 10 64K x16 K6R1016V1D-J(K,T,U,E)C(I) 08/10 VDD(V) Speed ( ns ) PKG 32-SOJ K: 32-SOJ(LF) 3.3 8/ 32-SOJ K : 32-SOJ(LF 32-TSOP2 3.3 8/ 32-TSOP2(LF 44-SOJ K : 44-SOJ(LF 44-TSOP2 U : 44-TSOP2(LF) 3.3 8/ 48-TBGA - 2 - PRELIMINARY PRELIMINARY for AT&T CMOS SRAM Temp. & ...
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... Memory Array 512 Rows 512x4 Columns I/O Circuit & Column Select PIN FUNCTION Pin Name I PRELIMINARY PRELIMINARY for AT&T CMOS SRAM PIN CONFIGURATION (Top View) N I/O 7 ...
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... CC ≥V ≤0.2V V -0. =8mA OL I =-4mA OH Symbol Test Conditions C V =0V I PRELIMINARY PRELIMINARY for AT&T CMOS SRAM Rating Unit -0.5 to 4.6 V -0 °C -65 to 150 ° - °C Typ Max 3.3 3 +0.3 0.8 Min Max -2 2 ...
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... OLZ OHZ PRELIMINARY PRELIMINARY for AT&T CMOS SRAM Value 3ns 1.5V See below , & WHZ OW OLZ OHZ D OUT 353 Ω * Including Scope and Jig Capacitance K6R1004V1D-10 Min Max ...
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... (Address Controlled CS=OE (WE OLZ t LZ(4, 50 PRELIMINARY PRELIMINARY for AT&T CMOS SRAM K6R1004V1D-10 Min Max WE Valid Data t HZ(3,4,5) t OHZ t DH Valid Data t PD ...
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... CW(3) t AS(4) High-Z t OHZ(6) (OE=Low Fixed CW(3) t AS(4) High-Z t WHZ( PRELIMINARY PRELIMINARY for AT&T CMOS SRAM (Min.) both for a given device and from device WR(5) t WP( Valid Data High-Z(8) t WR(5) t WP1( Valid Data t OW (10) High-Z(8) or ...
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... LZ t WHZ(6) WP applied in case a write ends going high. WR Mode Not Select Output Disable Read Write - 8 - PRELIMINARY PRELIMINARY for AT&T CMOS SRAM t WR( High-Z Valid Data High-Z(8) is measured from the beginning of write to the end of I/O Pin Supply Current High ...
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... MAX 0.841 20.95 ±0.12 0.825 ±0.005 +0.10 0.71 -0.05 1.27 +0.004 0.028 0.050 -0.002 - 9 - PRELIMINARY PRELIMINARY for AT&T CMOS SRAM Units:millimeters/Inches 9.40 ±0.25 0.370 ±0.010 0.20 0.008 0.69 MIN 0.027 1. 0.051 0.10 3.76 MAX MAX 1.30 0.004 0.148 ( ) 0.051 Rev. 3.0 July 2004 +0.10 -0.05 +0.004 -0.002 ...