K6R1004C1D-JC10 SAMSUNG [Samsung semiconductor], K6R1004C1D-JC10 Datasheet - Page 5

• Manufacturer Part Number: K6R1004C1D-JC10
• Description: 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1004V1D
TEST CONDITIONS
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
AC CHARACTERISTICS
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
D
Output Loads(A)
* Capacitive Load consists of all components of the
OUT
test environment.
Parameter
Z
O
= 50Ω
Parameter
(T
A
=0 to 70°C, V
Symbol
t
t
t
t
t
t
t
OHZ
t
t
t
t
OLZ
RC
AA
CO
OE
HZ
OH
PU
PD
LZ
R
L
= 50Ω
30pF*
CC
Min
=3.3±0.3V, unless otherwise noted.)
8
3
0
0
0
3
0
-
-
-
-
V
K6R1004V1D-08
L
= 1.5V
- 5 -
Max
Output Loads(B)
for t
8
8
4
4
4
8
-
-
-
-
-
HZ
, t
* Including Scope and Jig Capacitance
LZ
, t
WHZ
, t
Min
10
OW
D
3
0
0
0
3
0
-
-
-
-
See below
353
0V to 3V
OUT
K6R1004V1D-10
, t
Value
1.5V
3ns
OLZ
Ω
PRELIMINARY
& t
OHZ
CMOS SRAM
Max
10
10
10
5
5
5
-
-
-
-
-
PRELIMINARY
for AT&T
+3.3V
319Ω
5pF*
July 2004
Rev. 3.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns