K6X4016T3F-F SAMSUNG [Samsung semiconductor], K6X4016T3F-F Datasheet - Page 5

• Manufacturer Part Number: K6X4016T3F-F
• Description: 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

AC OPERATING CONDITIONS
TEST CONDITIONS
DATA RETENTION CHARACTERISTICS
AC CHARACTERISTICS
( V
1. Voltage range is 3.0V~3.6V for commercial and industrial product.
K6X4016T3F Family
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load(see right): C
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Read
Write
CC
=2.7~3.6V, Commercial product: T
Read cycle time
Address access time
Chip select to output
Output enable to valid output
LB, UB valid to data output
Chip select to low-Z output
Output enable to low-Z output
LB, UB enable to low-Z output
Output hold from address change
Chip disable to high-Z output
OE disable to high-Z output
LB, UB disable to high-Z output
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
LB, UB valid to end of write
Item
Parameter List
( Test Load and Input/Output Reference)
C
L
L
=30pF+1TTL
=100pF+1TTL
Symbol
t
t
V
I
SDR
RDR
DR
DR
A
=0 to 70 C, Industrial product: T
CS Vcc-0.2V
Vcc=3.0V, CS Vcc-0.2V
See data retention waveform
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
t
t
t
t
OHZ
t
t
t
OLZ
BLZ
BHZ
WC
CW
AW
WP
WR
DW
OW
BW
RC
CO
OE
OH
DH
AA
BA
HZ
AS
LZ
Test Condition
Min
55
10
10
55
45
45
40
25
45
5
5
0
0
0
0
0
0
0
5
-
-
-
-
55ns
5
A
1
=-40 to 85 C, Automotive product: T
Max
)
55
55
25
25
20
20
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.Including scope and jig capacitance
K6X4016T3F-B
K6X4016T3F-F
K6X4016T3F-Q
C
Min
L
70
10
10
70
60
60
55
30
60
Speed Bins
1
5
5
0
0
0
0
0
0
0
5
-
-
-
-
)
70ns
Max
70
70
35
35
25
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
2.0
0
5
-
Min
85
10
10
85
70
70
60
35
70
CMOS SRAM
5
5
0
0
0
0
0
0
0
5
-
-
-
-
Typ
85ns
-
-
-
-
A
=-40 to 125 C )
Max
85
85
40
40
25
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
3.6
10
10
20
August 2003
-
-
Revision 1.0
Units
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
V
A
A
A