DMN2013UFDE DIODES [Diodes Incorporated], DMN2013UFDE Datasheet

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DMN2013UFDE

Manufacturer Part Number
DMN2013UFDE
Description
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
1.DMN2013UFDE.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
DMN2013UFDE-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Ordering Information
Marking Information
Product Summary
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
•
•
Notes:
Date Code Key
DMN2013UFDE
D
atasheet number: DS35701 Rev. 5 - 2
V
General Purpose Interfacing Switch
Power Management Functions
(BR)DSS
Month
20V
Code
Code
Year
ESD PROTECTED
DMN2013UFDE-13
DMN2013UFDE-7
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com.
Part Number
<1000ppm antimony compounds.
DS(on)
11mΩ @ V
13mΩ @ V
Jan
1
) and yet maintain superior switching
R
2011
DS(ON)
Y
GS
GS
Feb
max
(Note 4)
2
= 4.5V
= 2.5V
U-DFN2020-6 Type E
Bottom View
2012
Mar
3
Z
Marking
T
N6
N6
Apr
A
I
10.5A
4
D
9.4A
= 25°C
max
N6
2013
A
www.diodes.com
May
5
1 of 6
N6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Jun
Features and Benefits
•
•
•
•
•
•
•
Mechanical Data
•
•
•
•
•
6
Pin Out
20V N-CHANNEL ENHANCEMENT MODE MOSFET
2014
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm
Low Gate Threshold Voltage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
B
Reel size (inches)
Jul
7
13
7
Aug
8
2015
C
2
Gate
Sep
Equivalent Circuit
9
Gate
Protection
Diode
2016
Oct
D
O
DMN2013UFDE
Drain
Quantity per reel
Source
10,000
3,000
Nov
N
© Diodes Incorporated
2017
E
May 2012
Dec
D

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DMN2013UFDE Summary of contents

Page 1

... YM = Date Code Marking Y = Year (ex 2011 Month (ex September) 2012 2013 2014 Mar Apr May Jun Jul www.diodes.com DMN2013UFDE 2 Drain Gate Gate Protection Source Diode Equivalent Circuit Quantity per reel 7 3,000 13 10,000 2015 2016 C D Aug Sep ...

Page 2

... C iss - 275 C oss - 257 C rss - 9.9 t D(on 66.4 t D(off www.diodes.com DMN2013UFDE Symbol Value Units 20 V DSS ±8 V GSS 10 8.5 12 10.0 9 7 2.5 S Symbol Value Units 0. 0.42 189 °C/W R θ JA 132 2. 1. θ ° ...

Page 3

... 0.010 10A D 0.005 100 125 150 ° www.diodes.com DMN2013UFDE 150° 125° 85° 25° -55° GATE-SOURCE VOLTAGE GS Fig.2 Typical Transfer Characteristics 125° 150° 85° ...

Page 4

... Fig. 8 Diode Forward Voltage vs. Current 100µ 100 www.diodes.com DMN2013UFDE T = 25°C A 0.2 0.4 0.6 0.8 1.0 1 SOURCE-DRAIN VOLTAGE ( 10V 8 TOTAL GATE CHARGE (nC) g Fig. 10 Gate Charge © ...

Page 5

... Fig. 12 Transient Thermal Resistance A3 A1 Dim L(2X b(6X) Dimensions (2x www.diodes.com DMN2013UFDE θJA(t) θ (t) JA ° C/W θ JA Duty Cycle t1/t2 10 100 1,000 U-DFN2020-6 Type E Min Max Typ 0.57 0.63 0.60 0 0.05 0.03 — — 0.15 0.25 ...

Page 6

... Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com DMN2013UFDE D atasheet number: DS35701 Rev IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMN2013UFDE May 2012 © Diodes Incorporated ...

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