DMN2013UFDE DIODES [Diodes Incorporated], DMN2013UFDE Datasheet - Page 3

• Manufacturer Part Number: DMN2013UFDE
• Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

DMN2013UFDE
D
atasheet number: DS35701 Rev. 5 - 2
0.020
0.015
0.010
0.005
30
25
20
15
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
0
0
0
50 -25
0
Fig. 5 On-Resistance Variation with Temperature
V , DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
Fig.1 Typical Output Characteristic
DS
J
0.5
Fig. 3 Typical On-Resistance vs.
4
I , DRAIN-SOURCE CURRENT
Drain Current and Gate Voltage
D
0
25
8
1
50
12
75
V
GS
I = 5A
D
V
1.5
=
100
GS
V
V
V
2.5
GS
GS
GS
= 1.5V
V
V
16
I = 10A
GS
= 1.8V
= 2.5V
= 4.5V
°
D
125
= 4.5V
2
150
20
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0.020
0.015
0.010
0.005
0.020
0.015
0.010
0.005
20
15
10
5
0
- 50
0
0
0
Fig. 6 On-Resistance Variation with Temperature
V
-25
DS
V
Fig.2 Typical Transfer Characteristics
GS
T , JUNCTION TEMPERATURE ( C)
= 5.0V
J
V
= 4.5V
GS
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
, GATE-SOURCE VOLTAGE
0
5
T = 125°C
A
I , DRAIN CURRENT
D
T = 150°C
A
25
50
T = 125°C
10
A
T = -55°C
75
A
T = 25°C
DMN2013UFDE
V
A
GS
T = 85°C
I = 5A
D
A
T = 85°C
T = 25°C
T = -55°C
= .5V
V
A
A
A
100
2
GS
I = 10A
D
T = 150°C
15
A
=
4.5
°
© Diodes Incorporated
125
V
150
May 2012
20