DMN2013UFDE DIODES [Diodes Incorporated], DMN2013UFDE Datasheet - Page 2

• Manufacturer Part Number: DMN2013UFDE
• Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
Continuous Drain Current (Note 6) V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMN2013UFDE
D
atasheet number: DS35701 Rev. 5 - 2
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing
GS
GS
Characteristic
= 4.5V)
= 8V)
@T
A
= 25°C unless otherwise specified
J
Characteristic
= 25°C
GS
GS
Characteristic
@T
= 4.5V
= 2.5V
@T
A
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
Steady
Steady
t<10s
t<10s
State
State
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
g
|
2 of 6
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
Min
0.5
20
Steady state
Steady state
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
T
T
T
A
A
A
A
t<10s
t<10s
= 25°C
= 70°C
= 25°C
= 70°C
2453
14.3
25.8
24.5
66.4
20.8
Typ
275
257
8.4
9.8
1.2
1.8
2.1
9.9
10
-
-
-
-
-
Symbol
V
V
I
GSS
DSS
I
I
I
I
DM
I
Max
1.1
1.2
D
D
D
D
S
±2
11
13
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Symbol
T
J,
R
R
R
P
P
T
θ JC
θ JA
θ JA
D
D
STG
Unit
mΩ
nC
nC
nC
nC
μA
μA
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
Ω
Value
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
-55 to +150
10.5
12.5
10.0
11.2
8.5
9.4
7.5
8.8
2.5
20
±8
80
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
DS
DS
GS
Value
0.66
0.42
2.03
1.31
189
132
9.3
61
43
= 0V, I
= 16V, V
= ±8V, V
= V
= 4.5V, I
= 2.5V, I
= 5V, I
= 0V, I
= 10V, V
= 0V, V
= 10V, I
= 10V, I
= 4.5V, R
DMN2013UFDE
GS
Test Condition
, I
D
D
S
GS
D
D
D
= 4A
= 8.5A
= 250μA
D
D
GS
DS
GS
= 250μA
= 8.5A
G
= 8.5A
= 8.5A
= 8.5A
= 0V, f = 1MHz
= 1.8Ω
= 0V
= 0V
= 0V,
© Diodes Incorporated
Units
Units
°C/W
°C/W
V
V
A
A
A
A
A
A
°C
W
W
May 2012