TLP561J_07 TOSHIBA [Toshiba Semiconductor], TLP561J_07 Datasheet - Page 3

• Manufacturer Part Number: TLP561J_07
• Description: GaAs IRed & Photo−Triac
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Individual Electrical Characteristics
Coupled Electrical Characteristics
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance
(input to output)
Isolation resistance
Isolation voltage
Fig.1: dv / dt test circuit
Forward voltage
Reverse current
Capacitance
Peak off−state current
Peak on−state voltage
Holding current
Critical rate of rise of
off−state voltage
Critical rate of rise of
commutating voltage
Characteristics
Characteristic
dv / dt(c)
Symbol
Symbol
dv / dt
I
V
BV
DRM
V
C
I
C
R
V
I
I
I
FT
TM
IH
R
H
IH
F
S
S
T
S
(Ta = 25°C)
(Ta = 25°C)
I
V
V = 0, f = 1MHz
V
I
V
V
V
I
I
V
V
V
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
F
TM
F
F
R
DRM
in
in
T
T
S
S
= 10mA
= Rated I
= Rated I
= 6V, R
= Rated V
= 5 V
= 0, f = 1MHz
= 500V
= 240V
= 60V
3
= 100mA
= 600V
rms
Test Condition
Test Condition
rms,
L
FT
FT
= 100Ω
, I
DRM
T
Ta = 85°C
= 15mA
―
(Fig.1)
(Fig.1)
5×10
2500
Min.
Min.
200
―
―
―
―
―
―
1.0
―
―
―
―
―
―
10
5000
5000
Typ.
Typ.
1.15
10
500
200
1.7
0.6
0.2
0.8
30
10
―
―
―
5
14
2002-09-25
Max.
1000
Max.
600
TLP561J
1.3
3.0
10
10
50
―
―
―
―
―
―
―
―
―
V / μs
V / μs
V
Unit
Unit
mA
mA
V
μA
nA
μA
pF
pF
rms
V
V
V
Ω
dc