TLP360J_07 TOSHIBA [Toshiba Semiconductor], TLP360J_07 Datasheet

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TLP360J_07

Manufacturer Part Number
TLP360J_07
Description
GaAs Ired & Photo-Triac
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Triac Drivers
Programmable Controllers
AC-Output Modules
Solid State Relays
The TOSHIBA TLP360J consists of a photo-triac optically coupled to a
gallium arsenide infrared-emitting diode in a four-lead plastic DIP
package.
• Peak off-state voltage: 600 V (Min.)
• Trigger LED current: 10 mA (Max.)
• On-state current: 100 mA (Max.)
• Isolation voltage: 5000 Vrms (Max.)
• UL recognized: UL1577, file No. E67349
• Option (D4) type
• Construction mechanical rating
•Trigger LED Current
Creepage distance
Clearance
Insulation thickness
Maximum operating insulation voltage : 890 Vpk
Maximum permissible overvoltage
(Note) When an EN60747-5-2 approved type is needed, please designate “Option (D4).”
TÜV approved: DIN EN60747-5-2
*Example: “(IFT7)”; “TLP360J(IFT7)”
(Note) When specifying the application type name for certification testing, be sure to use the standard product
type name, e.g., TLP360J(IFT7): TLP360J.
Standard
fication*
Classi−
(IFT7)
Trigger LED current (mA)
Certificate No. R50033433
Min.
V
T
= 6 V, Ta = 25°C
7.62 mm pitch
standard type
7.0 mm (min)
7.0 mm (min)
0.4 mm (min)
TOSHIBA Photocoupler GaAs Ired & Photo-Triac
Max.
10
7
: 8000 Vpk
10.16 mm pitch
TLP360J
TLPXXXF type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
T7
T7, blank
classification
Marking of
1
Pin Configuration (top view)
1
2
1: Anode
2: Cathode
3: Terminal1
4: Terminal2
Weight: 0.26 g (Typ.)
JEDEC
TOSHIBA
4
3
11-5B2
2007-10-01
TLP360J
Unit: mm

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TLP360J_07 Summary of contents

Page 1

TOSHIBA Photocoupler GaAs Ired & Photo-Triac Triac Drivers Programmable Controllers AC-Output Modules Solid State Relays The TOSHIBA TLP360J consists of a photo-triac optically coupled to a gallium arsenide infrared-emitting diode in a four-lead plastic DIP package. • Peak off-state voltage: ...

Page 2

Absolute Maximum Ratings Characteristic Forward current Forward current derating (Ta ≥ 53°C) Peak forward current (100 μs pulse, 100 pps) Reverse voltage Junction temperature Off-state output terminal voltage On-state RMS current On-state current derating (Ta ≥ 25°C) Peak on-state current ...

Page 3

Electrical Characteristics Characteristic Forward voltage Reverse current Capacitance Peak off-state current Peak on-state voltage Holding current Critical rate of rise of off-state voltage Critical rate of rise of commutating voltage Coupled Electrical Characteristics Characteristic Trigger LED current Turn-on time Isolation ...

Page 4

I – − Ambient temperature Ta (A) I – 3000 Pulse width ≤ 100μ 25°C 1000 500 300 100 ...

Page 5

Normalized 1.2 1 0.5 0.3 0.1 −40 - Ambient temperature Ta (°C) Normalized I DRM DRM = Rated 0 Ambient temperature ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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