PM800DV1B060 MITSUBISHI [Mitsubishi Electric Semiconductor], PM800DV1B060 Datasheet

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PM800DV1B060

Manufacturer Part Number
PM800DV1B060
Description
FLAT-BASE TYPE INSULATED PACKAGE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet

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Part Number:
PM800DV1B060
Manufacturer:
MITSUBISH
Quantity:
1 000
<Intelligent Power Module>
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
APPLICATION
General purpose inverter, servo drives and other motor controls
Publication Date : August 2011
PM800DV1B060
PACKAGE OUTLINES
1
FEATURE
a) Adopting new 5th generation Full-Gate
b) The over-temperature protection which
c) Error output signal is possible from all
d) Compatible V-series package.
• Monolithic gate drive & protection logic
• Detection, protection & status indication
circuits for, short-circuit, over-temperature
& under-voltage.
CSTBT
detects the chip surface temperature of
CSTBT
each protection upper and lower arm of IPM.
TM
TM
chip
is adopted.
Dimensions in mm

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PM800DV1B060 Summary of contents

Page 1

... Power Module> PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE PM800DV1B060 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Publication Date : August 2011 FEATURE a) Adopting new 5th generation Full-Gate CSTBT chip TM b) The over-temperature protection which detects the chip surface temperature of CSTBT is adopted ...

Page 2

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM MAXIMUM RATINGS (T = 25°C, unless otherwise noted) j INVERTER PART Symbol Parameter V Collector-Emitter Voltage CES I Collector Current C I CRM P Total Power Dissipation ...

Page 3

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Symbol Parameter Supply Voltage Protected by V CC(PROT Supply Voltage (Surge) CC(surge) Module case operating T C temperature T Storage Temperature stg V Isolation Voltage isol *: T measurement point is just under the chip. C THERMAL RESISTANCE ...

Page 4

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Collector-Emitter Saturation V CEsat Voltage V Emitter-Collector Voltage Switching Time c(on) t off t c(off) Collector-Emitter Cut-off I CES Current CONTROL PART Symbol Parameter I Circuit Current ...

Page 5

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE MECHANICAL RATINGS AND CHARACTERISTICS Symbol Parameter M s Mounting Torque Weight RECOMMENDED CONDITIONS FOR USE Symbol Parameter V Supply Voltage CC V Control Supply Voltage D V Input ON Voltage CIN(ON) V Input OFF Voltage CIN(OFF) f PWM Input Frequency ...

Page 6

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (V voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above V rating of the device ...

Page 7

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE ≥10µ 20k IF VD1 ≥0.1µ 20k ≥10µ IF VD2 ≥0.1µ ≥10µ 20k IF VD3 ≥0.1µ ≥10µ 20k IF VD4 ≥0.1µ 20k ≥10µ IF VD5 ≥0.1µ ≥10µ 20k ...

Page 8

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 800 Tj=25°C 700 600 500 VD=17V 400 300 200 100 0 0.5 1.0 COLLECTOR-EMITTER VOLTAGE V COLLECTOR-EMITTER SATURATION VOLTAGE (VS CHARACTERISTICS D (TYPICAL) 2.5 2.0 1.5 Ic=800A Tj=25°C Tj=125°C 1 CONTROL VOLTAGE V Publication Date : August 2011 2 ...

Page 9

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE SWITCHING TIME ( (TYPICAL) 10 Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load toff 1 ton 0.1 10 100 COLLECTOR CURRENT I SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 40 Vcc=300V VD=15V 35 Tj=25°C Tj=125°C 30 Inductive Load 200 400 COLLECTOR CURRENT I ...

Page 10

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE FREE WHEELING DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 25 Vcc=300V VD=15V 20 Tj=25°C Tj=125°C Inductive Load 200 400 EMITTER CURRENT I UV TRIP LEVEL VS. T (TYPICAL) 20 UVt 18 UVr -50 ...

Page 11

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1 0.1 Single Pulse 0.01 IGBT Part; Per unit base: Rth(j-c)Q=0.05 K/W FWDi Part; Per unit base: Rth(j-c)D=0.09K/W 0.001 0.00001 0.0001 0.001 TIME t (sec) Publication Date : August 2011 0.01 0 ...

Page 12

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Main Revision for this Edition No. Date Pages 1 8 November 2011 Publication Date : August 2011 Revision Output characteristics , “VD=13V” and “VD=17V” were reversed. 12 Points ...

Page 13

... Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage ...

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